GLOBALFOUNDRIES today announced its embedded magnetoresistive non-volatile memory (eMRAM) on the company’s 22nm FD-SOI (22FDX) platform has entered production.

The company is working with clients with multiple production tape-outs scheduled in 2020.

Designed as a replacement for high-volume embedded NOR flash (eFlash), GF’s eMRAM allows designers to extend their existing IoT and microcontroller unit architectures to access the power and density benefits of technology nodes below 28nm.

GF’s eMRAM is an embedded non-volatile memory (eNVM) that has passed five real-world solder reflow tests, and has demonstrated 100,000-cycle endurance and 10-year data retention across the -40°C to 125°C temperature range. The FDX eMRAM solution supports AEC-Q100 quality grade 2 designs, with development in process to support an AEC-Q100 quality grade 1 solution next year.

Custom design kits featuring drop-in, silicon validated MRAM macros ranging from 4 to 48 mega-bits, along with the option of MRAM built-in-self-test support is available today from GF and the company's design partners.

eMRAM is a scalable feature that is expected to be available on both FinFET and future FDX platforms as a part of the GF’s advanced eNVM roadmap. GF’s 300mm production line at Fab 1 in Dresden, Germany, will support volume production of 22FDX with MRAM.