Everspin Technologies, Inc.announced the first 32Mb Toggle MRAM product.
Everspin’s new 32Mb Toggle MRAM (MR5A16A) provides twice the capacity of its current 16Mb solution and enables applications such as storing configurations and setup and data logging in embedded systems that need a higher density option.
Toggle MRAM uses a 1 transistor, 1 MTJ cell to provide a simple, high-density memory. Everspin uses a patented Toggle cell design. Data are always non-volatile for 20-years at temperature.
During a read, the pass transistor is activated and data is read by comparing the resistance of the cell to a reference device. During writes, the magnetic field from Write Line 1 and Write Line 2 writes the cell at the intersection of the two lines but does not disturb other cells on either line.
Everspin MRAM products employ a one transistor, one magnetic tunnel junction (MTJ) memory cell for the storage element. The MTJ is composed of a fixed magnetic layer, a thin dielectric tunnel barrier and a free magnetic layer. When a bias is applied to the MTJ, electrons that are spin polarized by the magnetic layers traverse the dielectric barrier through a process known as tunneling.
The MTJ device has a low resistance when the magnetic moment of the free layer is parallel to the fixed layer and a high resistance when the free layer moment is oriented anti-parallel to the fixed layer moment.
MRAM is a memory that uses the magnetism of electron spin to provide non-volatility without wear-out. MRAM stores information in magnetic material integrated with silicon circuitry to deliver the speed of SRAM with the non-volatility of Flash in a single unlimited-endurance device.
Everspin's existing Toggle products have been sampled with companies in the gaming, industrial and military/aerospace markets. This device offers higher capacity while maintaining fast read and write access speeds and 20-year data retention inherent in all of Everspin’s Toggle devices. In addition, as with other Everspin Toggle products, the 32Mb option provides unlimited cycle endurance for reads and writes across a variety of temperatures, ranging from -40C to +125C, and is available in both BGA and TSOP standard package types for maximum design and system flexibility.
“Due to increasing data sets evolving across a wide range of IoT and industrial applications, our customers are looking for reliable, higher-density persistent memory options to replace legacy SRAM systems,” said Troy Winslow, VP of Global Sales at Everspin Technologies, Inc. “As critical applications push past the current 16Mb capacity, our customers will quickly benefit from our 32Mb Toggle MRAM solution.”
In addition, Everspin announced new 2Mb (MR1A16A) and 8Mb (MR3A16A) Toggle MRAM products for its customers that require more economical solutions for lower data capacity requirements. These densities complement the 1Mb, 4Mb and 16Mb devices that Everspin has been producing for years.
The 32Mb and 8Mb Toggle MRAM devices are currently sampling and will be in production the first quarter of 2020. The 2Mb will be sampling later this quarter, with production also following in the first quarter.