Everspin Technologies, Inc. has amended its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES to set the terms for a future project on an...
GLOBALFOUNDRIES today announced its embedded magnetoresistive non-volatile memory (eMRAM) on the company’s 22nm FD-SOI (22FDX) platform has entered production.
The company is working with clients...
Everspin Technologies, Inc. is developing STT-MRAM specifically for Industrial and IoT applications.
The company said at the Embedded World in Germany that the new...
Everspin Technologies, Inc. has released a comprehensive design guide to streamline the integration of its 1 Gigabit (Gb) Spin-transfer Torque Magnetoresistive Random Access Memory (STT-MRAM)...
Researchers at Tohoku University have demonstrated a high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology.
The development, announced...
Everspin Technologies, Inc.announced the first 32Mb Toggle MRAM product.
Everspin’s new 32Mb Toggle MRAM (MR5A16A) provides twice the capacity of its current 16Mb solution...
Everspin Technologies, Inc., a developer and manufacturer of Magnetoresistive RAM (MRAM) persistent memory solutions, announced that Phison Electronics will provide native support for Everspin’s 1...
This week, at the 2019 Symposia on VLSI Technology and Circuits (June 9-14, 2019), imec demonstrates field-free switching operation of spin-orbit torque MRAM (SOT-MRAM) devices...
Samsung Electronics has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI)...
Everspin Technologies, Inc., a developer and manufacturer of Magnetoresistive RAM (MRAM), announced it has shipped pre-production customer samples of its 28 nm 1-Gigabit (Gb) Spin...
