TSMC achieved 65nm product production in the second quarter last year. The company has also been in 90nm embedded DRAM production since the first quarter of 2006.
TSMCs 65nm embedded DRAM process and IP provide a higher bandwidth, lower power consumption, and a close to 50% smaller cell and macro size than previous high density memory generations.
The 65nm embedded DRAMs higher bandwidth is ideal for game console, high-end networking, digital consumer, and multimedia processors. It consumes less active and stand-by power than alternative high density memory technology while eliminating the need to power up I/Os.
TSMC 65nm embedded DRAM uses a low thermal budget module that can be added to the companys standard CMOS process. It is compatible with all 65nm logic libraries making it an efficient process for IP reuse. The embedded DRAM design features improved retention time and special power saving options for low power applications including sleep mode, partial power cut-off and on-chip temperature compensation.
The 65nm embedded DRAM process is built on up to 10 metal layers using copper low-k interconnect and nickel silicide transistor interconnect. It features a cell size less than a quarter of its SRAM counterpart, and macro densities ranging from 4Mbits to 256Mbits.