Sony And Micron Showcase 16Gb ReRAM
Researchers from Micron Technology and Sony have developed a 16-Gbit ReRAM (Resistive Random Access Memory) by using 27nm process technology.
The development, announced at International Solid-State Circuits Conference (ISSCC) 2014, could be applied to a storage-class memory (SCM) that would be faster than current DRAM.
The ReRAM had a 1Gbps DDR interface and eight bank memory architecture, which is similar to DRAM. Its speed was improved by parallel operation and pipeline data path. Its data transmission speed is 1 Gbps for reading and 200 Mbps for writing and its latencies for reading and writing are 2µs and 10µs, respectively.
As a resistance change element, the researchers used a bilayer structure consisting of a CuTe film and insulating film, and the resistance value was changed by the movement of Cu ions. The memory cell consisted of a selection transistor and resistance change element (1T1R).
Manufactured by using a 27nm triple-layer Cu interconnection process technology, its cell area was 6F2 (4,374nm2) - similar to DRAM - while the chip size is 168mm2.
Sony said that it is considering a wide variety of applications.
The ReRAM had a 1Gbps DDR interface and eight bank memory architecture, which is similar to DRAM. Its speed was improved by parallel operation and pipeline data path. Its data transmission speed is 1 Gbps for reading and 200 Mbps for writing and its latencies for reading and writing are 2µs and 10µs, respectively.
As a resistance change element, the researchers used a bilayer structure consisting of a CuTe film and insulating film, and the resistance value was changed by the movement of Cu ions. The memory cell consisted of a selection transistor and resistance change element (1T1R).
Manufactured by using a 27nm triple-layer Cu interconnection process technology, its cell area was 6F2 (4,374nm2) - similar to DRAM - while the chip size is 168mm2.
Sony said that it is considering a wide variety of applications.
