Engineers from Numonyx will describe a 1Gb PCM developed in 45nm CMOS with a 37.5mm2 die size, and a 266MB/s read throughput that is well suited for an execute-in-place architecture. An industrial collaboration between STMicroelectronics and Numonyx will present a 4Mb embedded PCM developed in 90nm CMOS that delivers a 12ns read time that approaches the speed of conventional embedded DRAM and SRAM. This high-performance memory has the potential for widespread adoption in SoC applications requiring nonvolatile capabilities.
Toshiba will describe their development of a 64Mb MRAM that utilizes perpendicular tunnel-junction cells with the fastest- reported read time of 30ns, using a novel sensing scheme and architecture that allows almost unlimited read/write cycling. Toshiba will also describe a novel solution to achieve larger signal-to-noise ratios in chain FeRAM (Ferroelectric RAM) that will lead to higher memory capacity and increased speeds, allowing it to be used as cache memory in SSD (Solid-State Drives) applications.
Engineers from Unity Semiconductor will describe a lesser known Conductive-Metal-Oxide (CMOx) memory that reaches a never-before-seen capacity of 64Mb in 0.13μm CMOS. This technology can be pushed into the 64Gb regime in 45nm CMOS, using a multi-layer technique.that they propose, providing extremely low-cost and low-power solutions for storage applications.
This and other related topics will be discussed at length at ISSCC 2010, the foremost global forum for new developments in the integrated-circuit industry. ISSCC, the International Solid-State Circuits Conference, will be held on February 7-11, 2010, at the San Francisco Marriott Marquis Hotel.