Samsung Electronics will apply Extreme Ultraviolet (EUV) lithography technology for the first time for DRAM mass production in the memory chip sector.
According to Korean The Elec, the world’s largest memory chipmaker is scheduled to begin mass producing the 1z-nm, which is its third generation 10nm-class DRAM, starting in September. Initially, the chipmaker will apply the existing ArF immersion tech to switch to EUV by November, the report claims.
As it typically happens when applying EUV, Samsung will not use EUV in the DRAM layers. It will produce the BLP layer that touches the bit line - basically the central data channel - using EUV and the rest of layers will be produces using the existing ArF immersion tech. This approach essentially cut costs linked to the use of multiple patterning procedures. The report claims that for 1a-nm DRAM chips, Samsung will apply EUV tech to four layers, and will move to five layers for the 1b chips.
Samsung first announced EUV development plans for the 1z last March. At the time, the company claimed to have enhanced productivity by more than 20 percent compared to the 1y DRAM, and also improved energy efficiency without using EUV equipment.
Samsung’s rival SK hynix also plans to apply EUV to as early as its next generation DRAM chips.