GLOBALFOUNDRIES Launches 22nm FD-SOI Technology Platform
GLOBALFOUNDRIES today launched a new semiconductor technology developed specifically to meet the ultra-low-power requirements of IoT, mainstream mobiles, RF connectivity and networking.
The company sats that the new 22FDX platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28nm planar technologies.
The 22nm two-dimensional, fully-depleted silicon-on-insulator (FD-SOI) technology offers industry?s lowest operating voltage at 0.4 volt, enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors. The platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.
22FDX leverages the high-volume 28nm platform in GLOBALFOUNDRIES? 300mm production line in Dresden, Germany. GLOBALFOUNDRIES launches its FDX platform in Dresden by investing $250 million for technology development and initial 22FDX capacity. This brings the company?s total investment in Fab 1 to more than $5 billion since 2009.
GLOBALFOUNDRIES? 22FDX platform enables software-control of transistor characteristics to achieve real time tradeoff between static power, dynamic power and performance. This platform consists of a family of differentiated products architected to support the needs of various applications:
- 22FD-ulp: For the mainstream and low-cost smartphone market, the base ultra-low power offering provides an alternative to FinFET. Through the use of body-biasing, 22FD-ulp delivers greater than 70 percent power reduction compared to 0.9 volt 28nm HKMG, as well as performance equivalent to FinFET. For certain IoT and consumer applications, the platform can operate at 0.4 volt, delivering up to 90 percent power reduction compared to 28nm HKMG.
- 22FD-uhp: For networking applications with analog integration, this offering is optimized to achieve the same ultra-high performance capabilities of FinFET while minimizing energy consumption. 22FD-uhp customizations include forward body-bias, application optimized metal stacks, and support for 0.95 volt overdrive.
- 22FD-ull: The ultra-low leakage offering for wearables and IoT delivers the same capabilities of 22FD-ulp, while reducing leakage to as low as 1pa/um. This combination of low active power, ultra-low leakage, and flexible body-biasing can enable a new class of battery-operated wearable devices with an order of magnitude power reduction.
- 22FD-rfa: The radio frequency analog offering delivers 50 percent lower power at reduced system cost to meet the stringent requirements of high-volume RF applications such as LTE-A cellular transceivers, high order MIMO WiFi combo chips, and millimeter wave radar. The RF active device back-gate feature can reduce or eliminate complex compensation circuits in the primary RF signal path, allowing RF designers to extract more of the intrinsic device Ft performance.
Design starter kits and early versions of process design kits (PDKs) are available now with risk production starting in the second half of 2016.
The 22nm two-dimensional, fully-depleted silicon-on-insulator (FD-SOI) technology offers industry?s lowest operating voltage at 0.4 volt, enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors. The platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.
22FDX leverages the high-volume 28nm platform in GLOBALFOUNDRIES? 300mm production line in Dresden, Germany. GLOBALFOUNDRIES launches its FDX platform in Dresden by investing $250 million for technology development and initial 22FDX capacity. This brings the company?s total investment in Fab 1 to more than $5 billion since 2009.
GLOBALFOUNDRIES? 22FDX platform enables software-control of transistor characteristics to achieve real time tradeoff between static power, dynamic power and performance. This platform consists of a family of differentiated products architected to support the needs of various applications:
- 22FD-ulp: For the mainstream and low-cost smartphone market, the base ultra-low power offering provides an alternative to FinFET. Through the use of body-biasing, 22FD-ulp delivers greater than 70 percent power reduction compared to 0.9 volt 28nm HKMG, as well as performance equivalent to FinFET. For certain IoT and consumer applications, the platform can operate at 0.4 volt, delivering up to 90 percent power reduction compared to 28nm HKMG.
- 22FD-uhp: For networking applications with analog integration, this offering is optimized to achieve the same ultra-high performance capabilities of FinFET while minimizing energy consumption. 22FD-uhp customizations include forward body-bias, application optimized metal stacks, and support for 0.95 volt overdrive.
- 22FD-ull: The ultra-low leakage offering for wearables and IoT delivers the same capabilities of 22FD-ulp, while reducing leakage to as low as 1pa/um. This combination of low active power, ultra-low leakage, and flexible body-biasing can enable a new class of battery-operated wearable devices with an order of magnitude power reduction.
- 22FD-rfa: The radio frequency analog offering delivers 50 percent lower power at reduced system cost to meet the stringent requirements of high-volume RF applications such as LTE-A cellular transceivers, high order MIMO WiFi combo chips, and millimeter wave radar. The RF active device back-gate feature can reduce or eliminate complex compensation circuits in the primary RF signal path, allowing RF designers to extract more of the intrinsic device Ft performance.
Design starter kits and early versions of process design kits (PDKs) are available now with risk production starting in the second half of 2016.
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