Details of this technology were presented at the IEDM (International Electron Devices Meeting), held from December 10-12 in Washington, D.C. (Session: 30.1).
ReRAM is a type of memory that uses material for which the resistance value changes when voltage is applied. ReRAM is amenable to miniaturization and can be manufactured inexpensively, making it attractive as an alternative to flash memory.
An important issue in the development of ReRAM has been the reduction of current required to erase memory. Also, when subjected to repeated, high-speed write and erase operations, ReRAM's resistance value tends to fluctuate, which is known to impair device quality. As such, controlling fluctuation of resistance value is of great importance for ReRAM.
Conventionally, ReRAM devices have been formed from nickel oxide (NiO) films. In Fujitsu Labs' new ReRAM, a NiO film doped with titanium (Ti:NiO) was developed, and its performance was evaluated in combination with a transistor.
As a result, voltage can be increased for memory erasures, and operations require only 5ns, approximately 10,000 times faster than in the past. At the same time, fluctuations in resistance value have been reduced to one-tenth (1/10th). Furthermore, by optimizing the voltage applied to the transistor, current required for an erase operation is reduced to 100 micro-amperes or less.
By utilizing this new material, Fujitsu Labs created a prototype ReRAM device that features low fluctuation of resistance value, even during high-speed operation. As an alternative to flash memory, if further minute non-volatile memory can be realized using ReRAM, there is potential for higher performance of mobile devices.
Fujitsu Labs plans to conduct further R&D related to ReRAM, such as development of miniaturization process technologies for ReRAM devices, and design of read and write circuits.