Samsung, Micron and SK Hynix are set to start mass-production of DRAM using their 18-nanometer process technologies in 2016. Samsung has already finished developing its 1X-nano D-RAM process and is now verifying its ability to be mass-produced. It is predicted that Samsung Electronics will start mass-production in 1st quarter of 2016.
Samsung Electronics started mass-production of 20-nano DRAM in March of 2014.
SK Hynix is planning to increase size of mass-production of 20-nano DRAM in 2016 and quickly chase after Samsung Electronics in 1X-nano process. It is heard that it will try to finish developing 1X-nano process sometime in first half of 2016 and start mass-production by end of 2016.
Micron is also focusing its capabilities in finish developing and mass-producing 1X-nano D-RAM. "Our goals in 2016 are to successfully increase output of 20-nano DRAM and start producing 1X-nano D-RAM." said CEO Mark Durcan of Micron.
Experts believe that Micron’s DRAM process has fallen back 1 to 2 generations compared to Samsung Electronics and SK Hynix. Actually it is estimated that size of Die of Micron’s 20-nano DRAM is bigger compared to 20-nano DRAMs of Samsung Electronics and SK Hynix. Strictly speaking, Micron’s 20-nano DRAM is on a similar level as of South Korean businesses’ 25-nano DRAM.