The first 2Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4Gb DDR3Lm product delivers the same optimized power efficiency as the 2Gb part, with a reduced chip count that is suited for ultrathin and tablet products. Both 2Gb and 4Gb DDR3Lm will be adopted into Micron's 30nm class, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.
"Power reduction is becoming ever more critical in the fast growing ultrathin markets. Micron's expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies," said Robert Feurle, vice president for Micron's DRAM marketing. "The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise."
Sampling of Micron's new DDR3Lm low-power product line begins now, with volume production on 30nm class devices expected to begin in 2Q'12.