GLOBALFOUNDRIES today unveiled a new 12nm FD-SOI semiconductor technology, offering the first multi-node FD-SOI roadmap. Following the introduction of the 22FDXTM offering, the company’s next-generation 12FDXTM platform is designed to enable the intelligent systems across a range of applications, from mobile computing and 5G connectivity to artificial intelligence and autonomous vehicles.

As the world becomes more and more integrated through connected devices, many emerging applications demand a new approach to semiconductor innovation. The chips that make these applications possible are evolving into mini-systems, with increased integration of intelligent components including wireless connectivity, non-volatile memory, and power management-all while driving ultra-low power consumption. GLOBALFOUNDRIES says that the new 12FDX technology is architected to deliver these levels of system integration, design flexibility, and power scaling.

12FDX provides an optimized platform for combining radio frequency (RF), analog, embedded memory, and advanced logic onto a single chip. The technology also provides a wide range of dynamic voltage scaling and design flexibility via software-controlled transistors—capable of delivering peak performance when and where it is needed, while balancing static and dynamic power for energy efficiency.

GLOBALFOUNDRIES’ new 12FDX technology is built on a 12nm fully-depleted silicon-on-insulator (FD-SOI) platform, enabling the performance of 10nm FinFET with better power consumption and lower cost than 16nm FinFET. The platform delivers a 15 percent performance boost over today’s FinFET technologies and as much as 50 percent lower power consumption.

GLOBALFOUNDRIES Fab 1 in Dresden, Germany is currently putting the conditions in place to enable the site's 12FDX development activities and subsequent manufacturing. Customer product tape-outs are expected to begin in the first half of 2019.