NCU's device consisted of a 5 µm x 1000 µm index-guided ridge waveguide laser structure, which was grown directly on a sapphire substrate using an Aixtron AIX 200/4 RF MOCVD machine. The buffer layer consisted of 2 µm GaN and 1.5 µm Al0.08Ga0.92N.
Professor J.I. Chyi, Director of the Optical Sciences Center at NCU and responsible for the development of the laser devices explains: "The results that we recently achieved with our horizontal flow reactor are groundbreaking. The MOCVD process is exceptionally stable, which is mandatory for the development of sophisticated optoelectronic devices such as violet laser diodes and the related reproducible production process."