Breaking News

Razer Unveils the Ultra-Lightweight DeathAdder V4 Pro Sony launches a high-resolution shotgun microphone with superior sound quality and compact design. Arctic announces New Liquid Freezer III Pro 280 and Pro 420 Silicon Power Launches Hypera microSDXC Express Card Samsung announces Watch8, Z Fold7 and Z Flip7

logo

  • Share Us
    • Facebook
    • Twitter
  • Home
  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map

Search form

Renesas Develops 16nm FinFET SRAM

Renesas Develops 16nm FinFET SRAM

Enterprise & IT Dec 17,2014 0

Renesas Electronics has developed a new circuit technology for automotive information devices using 16nm and more advanced process technologies. The company prototyped SRAM by using the new technology and Taiwan Semiconductor Manufacturing Co Ltd's 16nm FinFET process as cache memory for CPU cores of SoCs and real-time image processing blocks. And it confirmed that the SRAM operates at a speed of 641ps (picoseconds) with a voltage of 0.7V.

The japanese company developed a FinFET-compatible circuit technology that can stably read and write data with a low voltage.

A new circuit technology was developed using the "word line overdrive" method, which realizes high-speed reading and writing at the same time with a low voltage. As the process is scaled down, the lowest operating voltage deteriorates due to the variation of elements. As a result, an assist circuit is used to solve the problem. It improves operation stability at the time of reading data by slightly lowering the voltage of word lines.

However, with this method, the operation margin deteriorates at the time of writing data, and the reading speed lowers.

So Renesas developed an assist technology that takes advantage of the characteristics of FinFET and slightly increases the voltage of word lines so that the pulse width at the time of reading data becomes different from that at the time of writing data. As a result, it became possible to realize high-speed reading while ensuring an operation margin at the time of reading and writing data.

Second, Renesas developed a design technique in consideration of the variation of FinFET elements, which is different from the variation of the elements of planar MOSFET. For example, at the center and edges of an array of memory cells, an offset occurs to the bit line current at the time of reading data, generating a current difference. As a result, it becomes impossible to ensure a sense amplifier margin at the time of reading data, potentially making the device malfunction.

Renesas quantitatively measured the current offset with the prototyped chip. And, based on the measurement results, it enabled to finely adjust circuits and ensure an optimal operation margin. As a result, it becomes possible to realize a high reliability required for automotive information equipment, the company said.

Tags: Renesas technologysram
Previous Post
LG, Samsung, To Dominate The TV Market in 2015
Next Post
Sony Film Debut Canceled After Threats

Related Posts

  • Renesas Introduces First PCIe 6.0 Chips for Next-Generation Devices

  • Renesas to License Chip IP As It Seeks For New Revenue Sources

  • Renesas to Buy Integrated Device Technology for $6.7 Billion

  • DENSO to Increase Its Shareholding in Renesas

  • Toyota Selects Renesas Chips for its Autonomous-Driving Vehicles

  • Renesas To Showcase New Autonomous-Driving Vehicle At CES

  • Renesas To Buy Intersil For $3.2 Billion

  • TDK To Buy Semiconductor Factory From Renesas Electronics

Latest News

Razer Unveils the Ultra-Lightweight DeathAdder V4 Pro
PC components

Razer Unveils the Ultra-Lightweight DeathAdder V4 Pro

Sony launches a high-resolution shotgun microphone with superior sound quality and compact design.
Cameras

Sony launches a high-resolution shotgun microphone with superior sound quality and compact design.

Arctic announces New Liquid Freezer III Pro 280 and Pro 420
Cooling Systems

Arctic announces New Liquid Freezer III Pro 280 and Pro 420

Silicon Power Launches Hypera microSDXC Express Card
Cameras

Silicon Power Launches Hypera microSDXC Express Card

Samsung announces Watch8, Z Fold7 and Z Flip7
Smartphones

Samsung announces Watch8, Z Fold7 and Z Flip7

Popular Reviews

be quiet! Light Loop 360mm

be quiet! Light Loop 360mm

be quiet! Dark Mount Keyboard

be quiet! Dark Mount Keyboard

be quiet! Light Mount Keyboard

be quiet! Light Mount Keyboard

Arctic Liquid Freezer III 420 - 360

Arctic Liquid Freezer III 420 - 360

Noctua NH-D15 G2

Noctua NH-D15 G2

Soundpeats Pop Clip

Soundpeats Pop Clip

be quiet! Light Base 600 LX

be quiet! Light Base 600 LX

Crucial T705 2TB NVME White

Crucial T705 2TB NVME White

Main menu

  • Home
  • News
  • Reviews
  • Essays
  • Forum
  • Legacy
  • About
    • Submit News

    • Contact Us
    • Privacy

    • Promotion
    • Advertise

    • RSS Feed
    • Site Map
  • About
  • Privacy
  • Contact Us
  • Promotional Opportunities @ CdrInfo.com
  • Advertise on out site
  • Submit your News to our site
  • RSS Feed