Everspin has signed up chip maker GlobalFoundries as a manufacturing partner for its next-generation MRAM (Magnetoresistive RAM) memory chips, a move that is expected to...

Emerging, high-density non-Volatile-Memory (NVM) chips such as MRAM/STTMRAM and PCM will be increasingly used in various markets and will represent a $1.6B business by 2018,...

Toshiba has developed a prototype memory element for a spin transfer torque magnetoresistive random access memory (STT-MRAM) that achieves the lowest power consumption yet reported,...

Japan-based Buffalo has introduced a new line of solid state drives (SSDs) that use MRAM cache instead of standard SDRAM. Designed for...

Micron Technology and Singapore's A*STAR Data Storage Institute (DSI) will collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising...

Samsung Electronics today announced acquisition of Grandis Inc., a leader in spin transfer torque random access memory (STT-RAM). Grandis will be merged into those Samsung's...

Hynix Semiconductor and Toshiba have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next...

During the International Electron Device Meeting (IEDM) in Sans Francisco this week, IBM, Samsung and the Hynix presented papers on Spin torque MRAM, or STT...

Fujitsu Laboratories Limited today announced the development of a new memory cell circuit for spin-torque-transfer MRAM that enable a space savings of 60% and achieve...

Fujitsu Laboratories Limited and the University of Toronto today announced that they have jointly developed the first high-reliability read-method for use with spin-torque-transfer (STT) MRAM...