At this year's event, Samsung unveiled new high-performance, high-density SSDs that offer over 1TB memory storage. Among the highlights were the 840 EVO, a consumer-oriented entry-level SATA based SSD offering up to 1TB, and the XS1715, an ultra-fast NVMe SSD for enterprise storage use offering up to 1.6TB.
Samsung plans to initially introduce the Samsung SSD 840 EVO to major global markets in early August.
The new Samsung SSD 840 EVO line-up makes use of 10-nanometer class 128Gb high-performance NAND flash memory, which Samsung began mass producing in April. With these chips and Samsung's proprietary multi-core controller, the Samsung SSD 840 EVO promises to achieve high value for performance with improved sequential read and write speeds.
The '840 EVO' line-up has significantly higher sequential write performance. Utilizing the industry's most compact 10nm-class 128Gb high-performance NAND, Samsung proprietary controller and Turbo Write drive, the Samsung SSD 840 EVO boasts superior performance. The Samsung SSD 840 EVO also has flexible product supply capacity, making it the most competitive device on the market today.
Compared with the 250GB 840 Series SSD, the highest selling capacity of the 840 lineup, the new 250GB 840 EVO now delivers 520MB/s sequential write speed ? making it more than 2 times faster than last generation. In the case of 120GB model, the 840 EVO achieves 410MB/s sequential write speed, which is approximately 3 times as fast as that of the 120GB 840 Series SSD.
|Samsung SSD 840 EVO Specifications|
|4KB Random Read (QD32)||94K IOPS||97K IOPS||98K IOPS||98K IOPS|
|4KB Random Write (QD32)||35K IOPS||66K IOPS||90K IOPS||90K IOPS|
|Samsung SSD comparison|
| Samsung SSD 840 Pro
| Samsung SSD 840 EVO
|Controller||Samsung MCX||Samsung MDX||Samsung MDX|| Samsung
|NAND|| 27nm Toggle-Mode
| 21nm Toggle-Mode
| 21nm Toggle-Mode
| 19nm Toggle-Mode
|Random Read||80K IOPS||96K IOPS||100K IOPS||97K IOPS|
|Random Write||36K IOPS||62K IOPS||90K IOPS||66K IOPS|
|Warranty||3 years||3 years||5 years||3 years|
For the 1TB 840 EVO SSD, the sequential read/write performance has reached 540MB/s and 520MB/s. Furthermore, both the random read and write performance have achieved the highest level, reaching 98,000 IOPS (Input Output Operations Per Second) and 90,000 IOPS, respectively.
The Samsung SSD 840 EVO line-up is available in five capacities: 120GB, 250GB, 500GB, 750GB, and 1TB.
The 1 terabyte SSD Samsung launched costs $650 while a same-capacity hard disk drive by biggest manufacturer Western Digital Corp sells for less than $100.
In addition, Samsung has developed the XS1715, the first 2.5-inch NVMe SSD line-up. This device will expand Samsung's market base for enterprise SSDs, and the company will make them available in the second half of this year.
The new NVMe SSD XS1715 delivers random read performance that is over 10 times faster than Samsung's former high-end enterprise storage SSD. The new NVMe SSD utilizes both the PCIe 3.0 interface, which is approximately two times faster than the PCIe 2.0 interface, and NVM express technology which accelerates the SSD's overall speed.
The 1.6TB NVMe SSD provides a sequential read speed at 3,000MB/s, which allows it to process 500GB of data (equivalent to 100 Full HD movies 5GB in length) in less than 3 minutes. When compared to other products with similar specifications, this new SSD is 14 times faster than a high-end enterprise HDD for server use, and six times faster than Samsung's former high-end enterprise SSD storage.
The XS1715's random read performance reaches up to 740,000 IOPS (Input Output Operations Per Second), which is more than 10 times as fast as existing high-end SSD storage options.
The new NVMe SSD XS1715 comes in 400GB, 800GB and 1.6TB versions. It can also be found on the NVMe Integrators List (IL), which makes it an easy-to-manage and reliable solution for data centers and servers. System performance can be improved dramatically by upgrading to the NVMe SSD XS1715 from a 2.5-inch HDD or a 2.5-inch SATA SSD.
Over the next several years, Samsung expects to continue to develop a variety of NVMe SSD products with increasingly high performance levels.
Chipmakers are betting on SSDs to become a fresh earnings driver in the $24 billion flash memory market, which is currently booming thanks to strong demand for cut-price tablets and smartphones in China.
Samsung is building a $7 billion chip plant in China, while Toshiba Corp and SK Hynix are also boosting production.
Samsung accounts for around 40 percent of global NAND flash market and competes with Toshiba, Micron Technology and SK Hynix. In the SSD market, it competes with Toshiba, Sandisk and Intel.