He added that, "Samsung will continue to proactively respond to diverse consumer needs with the timely development of differentiated next-generation green memory devices and solutions, and thus reinforce market leadership that adds to the evolving market of advanced premium memory solutions."
Samsung said that compared with a datacenters utilizing 40nm-class DRAM and HDDs, the new 20nm DDR3 and SSDs offer a six-fold overall performance increase while power consumption decreases by 20 percent on server systems and 60 percent on storage systems.
These performance benefits were achieved by incorporating Samsung's 20nm-class DDR3 technology and its latest enterprise SSD solutions; the SATA 6.0Gb/s interface SM843 for server systems and the SAS interface SM1625 for enterprise storage.
Following the announcement of its 20nm-class 2Gb DDR3 DRAM in September, 2011, Samsung initiated production of its 20nm-class 4Gb DDR3 last month, more than tripling its productivity compared to 40nm-class DDR3 on notebook PCs, and also marking a major turning point from the conventional 40nm-class and 30nm-class DRAM used in personal computers.
Samsung claims that by replacing the 40nm-class 4GB DDR3 and HDDs of current notebooks with Samsung?s 20nm-class 4GB DDR3 module paired with its latest 250-Gigabyte SSDs, the notebooks' performance will be comparable with newly launched ultrabooks and their battery life will be extended by approximately one hour.