Samsung Electronics has begun mass producing the first 512-gigabyte (GB) embedded Universal Flash Storage (eUFS) 3.0 for mobile devices.

In line with the latest eUFS 3.0 specification, the new Samsung memory delivers twice the speed of the previous eUFS storage (eUFS 2.1).

Samsung produced the first UFS interface with eUFS 2.0 in January, 2015, which was 1.4 times faster than the mobile memory standard at that time, referred to as the embedded multi-media card (eMMC) 5.1. Within four years, the company’s newest eUFS 3.0 matches the performance of today’s ultra-slim notebooks.

Samsung’s 512GB eUFS 3.0 stacks eight of the company’s fifth-generation 512-gigabit (Gb) V-NAND die and integrates a high-performance controller. At 2,100 megabytes-per-second (MB/s), the new eUFS doubles the sequential read rate of Samsung’s latest eUFS memory (eUFS 2.1) which was announced in January. The new solution’s blazing read speed is four times faster than that of a SATA solid state drive (SSDs) and 20 times faster than a typical microSD card. In addition, the sequential write speed also has been improved by 50 percent to 410MB/s, which is equivalent to that of a SATA SSD.

The new memory’s random read and write speeds are 63,000 and 68,000 Input/Output Operations Per Second (IOPS), respectively. With the significant gains in random read and writes that are more than 630 times faster than general microSD cards (100 IOPS), a number of complex applications can be simultaneously run.

Following the 512GB eUFS 3.0 as well as a 128GB version that are both launching this month, Samsung plans to produce 1TB and 256GB models in the second half of the year.

Comparison of Samsung’s internal memory performance