Samsung's seven-month window between new process technology development and mass production of the new DDR3 (Jan. to Jul. ?09) is expected to allow OEMs to optimize their next-generation systems more quickly.
In addition, moving to a 40nm production process will provide around a 60 percent increase in production productivity over use of a 50 nm process, Samsung claims.
Besides 16GB, 8GB and 4GB RDIMMs for servers, Samsung will produce UDIMMs (unregistered in-line memory modules) for work stations and desktop PCs or SODIMMs (small outline dual in-line memory modules) for notebook PCs of up to 4GBs, using the new chip.
The monolithic 2Gb chips are energy-efficient solutions for high performance memory applications. Each supports a data rate of up to 1.6 gigabits per second (Gbps) at 1.35 volts, up to twice as fast as an 800Mbps 1Gb-based dual-die package.
According to market research firm iSuppli, 2 Gb DDR3 is expected to account for 82 percent of the total DDR3 DRAM market in units sold by 2012, and become the mainstream DDR3 DRAM product by 2010.