Everspin Technologies will be demonstrating technologies at two memory industry events this week in Santa Clara, CA., MRAM Developer Day and Flash Memory Summit.

Today, the inaugural MRAM Developer Day begins at the Santa Clara Convention Center with a keynote from Kevin Conley, President and CEO of Everspin, entitled "The MRAM Revolution." As developer and manufacturer of discrete and embedded MRAM, Everspin will also be featured throughout the event, with participation in breakouts and discussion panels.

Flash Memory Summit takes place in the same venue beginning on Tuesday and continuing through Thursday, with Everspin participation.The show will include several panels and discussions featuring Everspin speakers.

The Everspin FMS booth (#319) will feature Everspin's latest Spin-transfer Torque MRAM (STT-MRAM) products and technologies, including:

• The first major design win with a top enterprise storage vendor powered by Everspin 40nm 256Mb STT-MRAM memory. This design brings the capabilities of low latency data persistence to the company's NVMe solution. Through the native data persistence of MRAM, this vendor claims to achieve "new levels of performance, storage capacity and reliability."
• NVMe over Fabric (NVMeoF) live demonstration. This demo features two servers connected over a high-speed Ethernet fabric with an nvNITRO accelerator that enables NVMe communication to remote persistent memory locations, bypassing the system CPU, for greater efficiency.
• As part of the Xilinx Alliance Program, Everspin will be featuring MRAM product solutions enabled by Xilinx FPGAs.
  SMART Modular Technologies, in cooperation with Everspin, will showcase their nvNITRO NVMe storage accelerator, using 256Mb STT-MRAM to achieve record low latency