According to Soo-In Cho, president and general manager of Samsung Electronics Memory Division, "Samsung continues to set the pace in advanced memory for high-end server applications by offering 40nm-class 32GB memory modules to reach previously unattainable levels of system capacity. In just 10 months, Samsung has now secured the best competitive advantage with the broadest portfolio of 40nm-class DDR3 based memory solutions in the industry since the 40nm-class DRAM was first produced last July."
"Our highly successful implementation of 40nm-class technology is indicative of our determination to move toward the 30nm-class process node in the second half of this year. Our 30nm-class technology will provide even more advanced memory solutions for high-end server and PC applications".
Samsung is using the industries highest-density monolithic DDR3 device - a 40-nanometer (nm) class, four gigabit (Gb) DDR3 chip as the building block for the new 32GB module. This comes just one year after the company announced its 50nm-class 2Gb based, 16GB registered dual inline memory module (RDIMM) last March.
The 32GB RDIMM consists of 36 dual-die 40nm-class 4Gb DDR3 chips that can perform at equal or greater levels to a 40nm-based 16GB RDIMM with no increase in power consumption.
By equipping a dual CPU, two-way server with 32GB modules, a server system can have up to 384GB of memory.
In addition, replacing 12 DRAM modules of 16GB density with just six 32GB modules would achieve a 192GB total density, while allowing the DRAM operating speed in a two-way server system to rise by 33 percent from 800 megabit per second (Mbps) to 1,066Mbps, as power is cut by 40 percent.
Mass production of the 32GB RDIMM is slated to begin next month, Samsung said.