Micron today announced that it is sampling 4 gigabyte (GB) DDR3 modules, designed using 2 gigabit (Gb) components. High-density memory modules are becoming increasingly important for notebook computers as graphic-intensive operating systems and other content heavy applications continue to make their way onto the market. Micron’s portfolio of DDR3 modules range in density from 512 megabytes (MBs) to now 4 GBs.

The company also announced it has received Intel’s validation on 512 MB, 1 GB and 2 GB DDR3 notebook modules for the upcoming Intel Centrino 2 processor technology mobile platform. Micron’s 4 GB DDR3 notebook modules are currently going through the validation process at Intel.

Micron’s DDR3 modules support data rates of up to 1333 megabits per second, enabling better system and graphics performance. DDR3 supply voltage operates at 1.5-volts in comparison to DDR2’s 1.8-volts, reducing power consumption by up to 30 percent.

Micron’s 512 MB, 1 GB and 2 GB modules are in mass production now, with its 2 Gb-based DDR3 4 GB modules expected to be in mass production in Q2 2008.