TSMC has released a "compact" version of its 16nm FinFET+ (16FF+) fabrication process, the 16nm FinFET Compact (16FFC). 16FFC claims advantages in power, performance, and area compared to the existing 16FF+ process, along with easy migration from 16FF+. It can be used for ultra low-power IoT applications such as wearables, mobile, and consumer products.

By reducing nominal voltage to 0.55V, 16FFC reduces power consumption by over 50%, according to the company.

Compared to the current 16FF+ process, 16FFC simplifies the process, reducing manufacturing cycle time; reduces SRAM area; optimizes die size; tightens SPICE corners; and can run below 0.6V to support ultra-low power. It also reduces leakage.

TSMC expects that its 16nm FinFET technology will receive a total of about 50 product tape-outs covering different chip products. Total production capacity of TSMC's 16nm FinFET processes at the end of 2016 will triple that a year earlier.

As for 10nm FinFET, TSMC expects to move the node technology to risk production at the end of 2016, followed by mass production in the first quarter of 2017.