Samsung's UtRAM is built in a 90 nm process and is the industry's first device with 256 Mbit capacity. Clocked at 133 MHz, the memory is about 1.7 times faster than today's 80 MHz PSRAM. The manufacturer believes the speed gain will pay off in multimedia applications for cellphones. Sampling of the memories is scheduled to begin later this month, volume shipments are expected by the end of 2005.
The 256Mb UtRAM is fully compliant to JEDEC's (Joint Electron Device Engineering Council) burst pseudo-SRAM standard.
The global market for pseudo-SRAM, of which Samsung claims to hold at least 30 percent, is forecast to grow an annual 33 percent through 2008.