Since introducing the industry's first GDDR in 2000, Samsung Electronics has become the first to secure a full lineup of GDDR memory technology with GDDR2 in 2002 and GDDR3 in 2003. The GDDR4, whose 32 pins each process 2.5 GB per seconds, can transmit data equivalent to four DVD-quality movies per second.
Until the breakthrough, a memory chip running at 10 GB per second had been considered impossible. Among the mass-produced GDDR3 DRAM, the fastest transmits data at a speed of 6.4 GB per second. To break the 10 GB barrier, Samsung says it incorporated data bus inversion and multi-preamble technologies into the semiconductor for the first time, improving processing speed for a pin from 1.6 to 2.5 GB per second.
Samsung Electronics currently leads the global graphic DRAM market, commending about 50 percent, followed by Hynix Semiconductor with 33 percent and Germany?s Infineon Technologies with 15 percent. According to Mercury Research, the market for graphic DRAM is expected to increase to US$1.5 billion this year and $1.9 billion next year. ?Demand for the latest chip will surge as the need for high-speed semiconductors for game and movie functions becomes essential,? Samsung said.