Elpida has leveraged its low voltage and low-power consumption technology to achieve a device that can operate at 1.2V (conventional DDR Mobile RAM requires 1.8V) while achieving a high-speed data transfer rate of 800Mbps (DDR Mobile RAM is 400Mbps). Also, compared with other same-density and same-speed DDR2 products, as little as 1/16th the power consumption is needed when on standby, making it an eco-friendly DRAM.
Because of its high density, low power consumption and high-speed functionality the new device is likely to make a powerful contribution to the development of innovative mobile applications for high-end mobile phones and smart phones and in such areas as the growing market for Netbooks and MID (Mobile Internet Devices).
The new device can be shipped as a bare chip for use in SiP (System in Package), MCP (Multi-chip Package) and other multi-layer packages or it can be packaged for a PoP (Package on Package) configuration to enable space-saving features.
Sample shipments are expected to begin in October, 2009 with the start-up of mass production scheduled for the first half of 2010.
Product procesess: 50nm CMOS
Data width: x16-bit / x32-bit
Per pin data transfer rate: 800Mbps, 667Mbps
Supply voltage : VDD1: 1.8V, VDD2/VDDCA/VDDQ: 1.2V
Operating temperature range (TC): -25 to 85°C (standard), -25 to 105°C (extended temperature range)
Bare chip (JEDEC compatible)
168-ball PoP-type FBGA (JEDEC compatible)
216-ball PoP-type FBGA (JEDEC compatible)