At this week’s IEEE IEDM conference, nano-electronics research center imec showed for the first time the integration of high mobility InGaAs as a channel material...

South Korean chipmaker SK Hynix will begin the mass production of 48-layered three-dimensional (3D) vertical NAND (V-NAND) flash memories next year, according to its chief...

Samsung is adding three TCO-optimized, high-performance SSDs, based on 3-dimensional (3D) Vertical NAND (V-NAND) technology, to its portfolio of advanced enterprise and data center SSDs...

Samsung Electronics has begun mass producing its first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC)...

SK Hynix is joining the small list of companies that mass producing 3D NAD flash chips, with mass production scheduled to start later this year...

Hot on the heels the announcement of Sandisk/Toshiba for the development of their 48-layer 3D NAND memory, Micron and Intel revealed the availability...

Toshiba and Sandisk have developed the first 48-layer three dimensional stacked cell structure flash memory, a 2-bit-per-cell 128-gigabit (16 gigabytes) device also referred as BiCS2...

Intel will release its first 3D NAND flash chips solid-state drives next year and claims that it will manage to offer twice the density of...

Two of the world's major NAND flash memory chip makers -- Toshiba and Samsung Electronics -- are competing against each another on the development and...

Samsung Electronics announced the development of a "Vertical NAND (V-NAND)" 3D NAND flash memory that endures 35,000 write/erase cycles as an enterprise SSD. Speaking earlier...