South Korean chipmaker SK Hynix will begin the mass production of 48-layered three-dimensional (3D) vertical NAND (V-NAND) flash memories next year, according to its chief executive. "After completing the development of 36-layered 3D NAND flash memory chips this year, we will develop 48-layered 3D NAND flash memories next year and begin mass producing them,”"said SK Hynix CEO Park Sung-wook on Wednesday.
SK Hynix will be the industry’s second semiconductor manufacturer to mass produce 48-layered 3D NAND flash memory following Samsung Electronics Co., which began mass producing the high-performance memory chip in August.
3D NAND stacks memory cells vertically, and therefore, boasts faster speed and enhanced durability. It also reduces energy consumption and is less volatile.
Toshiba and Micron Technology are also on their way to mass produce 3D NAND flash memories.