Silicon Power (SP) is proud to announce the launch of the Inspire microSDXC card, a powerful new memory solution tailored for content creation, 4K video production, and handheld gaming. With blazing fast read speeds up to 170MB/s and write speeds up to 160MB/s,[1] the Inspire card offers the speed, reliability, and versatility that today's creators and gamers demand.

Built for Speed, Ready for Action
Designed with UHS-I U3 and V30 video speed ratings, the Inspire card is ideal for applications that demand high-speed data processing — from capturing ultra-high-definition 4K video on drones and action cameras to supporting mobile gaming and professional content creation on portable game consoles and Android devices. With capacity options of 128GB, 256GB, and 512GB, users can choose the perfect fit for their storage needs. For power users who require even more storage, a 1TB option is slated for release in Q2 of this year.

Enhanced Reliability Meets Modern Versatility
Engineered with 3D TLC NAND technology, the Inspire card delivers not only superior performance, but also long-lasting reliability. When paired with the C200 USB Type-C card reader, users can achieve speeds beyond standard UHS-I limitations for efficient data transfers.[1] The A2 application performance rating on the 256GB/512GB/1TB capacities ensures faster app loading and smoother operation for Android devices. With broad compatibility across devices and a tested durability rating of at least 10,000 insertions, users can seamlessly switch the Inspire card between gear without missing a beat.

From navigating the skies with a drone, capturing action-packed moments, or gaming on the go, the Inspire microSDXC card gives users the freedom to do more without sacrificing performance. Backed by a 10-year limited warranty, this new lineup reinforces Silicon Power’s position as a trusted leader in flash storage technology.

[1] Results are based on data from Silicon Power’s internal lab. Actual results may vary based on the environment, usage patterns, or other factors.