Samsung Electronics today announced the first production of ultra-high-speed four gigabit (Gb) low power double data rate 3 (LPDDR3) mobile DRAM, which is being produced at a 20 nanometer (nm) class process node. The new 4Gb LPDDR3 mobile DRAM promises to enable performance levels comparable to the standard DRAM utilized in personal computers, making it an attractive solution for multimedia-intensive features on next-generation mobile devices such as high-performance smartphones and tablets.

The 4Gb LPDDR3 can transmit data at up to 2,133 megabits per second (Mbps) per pin, which is more than double the performance of the preceding memory standard mobile DRAM (LPDDR2) with a data transmission speed of 800Mbps. This makes it possible to transmit three full HD videos, collectively 17 Gigabytes (GBs) in length, in one second over the new Samsung chip embedded in a mobile device.

Samsung's 20nm-class LPDDR3 mobile DRAM (20nm-class means a process technology node somewhere between 20 and 30 nanometers) enables display of full HD video on smartphones with five inch-or-larger screens. In comparison to a 30nm-class LPDDR3 DRAM, the new device generates more than a 30 percent improvement in performance and 20 percent savings in power consumption.

By adopting Samsung's 4Gb LPDDR3 mobile DRAM, OEMs can have a 2GB package that includes four of Samsung?s new chips in a single package that meets the memory package height of 0.8 millimeters (mm).

Representing a major growth factor in the DRAM market, Samsung plans to increase production of its 20nm-class mobile DRAM later this year.