The monolithic 1Gb Mobile DRAM is a competitive choice for mobile applications over the double-die stack, 1Gb memory solution widely used today, as the electric current in the new chip drops a full 30 percent, according to samsung.
The new 1Gb Mobile DRAM chip uses the same packaging technique as the 512Mb double-die stack 1Gb package, however it introduces a new temperature-sensing feature. This new temperature-compensated, self-refresh feature maximizes the self-refresh cycle to reduce power drain in standby mode by 30 percent over conventional memory chip designs.
Also offering a more compact form factor, the new 1Gb Mobile DRAM chip is at least 20 percent thinner than a multi-stack package of 512Mb dies, allowing a single high-density package solution of 1.5Gb or even 2Gb Mobile DRAM memory,
Samsung plans to mass produce the new device beginning in the second quarter of 2007.