Samsung Electronics today announced acquisition of Grandis Inc., a leader in spin transfer torque random access memory (STT-RAM). Grandis will be merged into those Samsung's R&D operations that are focused on developing the next evolution of memory, where new semiconductor materials and structures are reviewed for their long-term commercial value.

With its expertise in next-generation memory solutions and strong technical capabilities, Grandis will contribute to Samsung's continued development of memory semiconductor technologies and become a key part of the company's global R&D network.

Effective late July, the acquisition includes the full scope of technology, assets and human resources under Grandis, Inc. Further details of the transaction were not disclosed.

Grandis' non-volatile memory technology is a future contender to DRAM and NAND flash memory. The technology requires less power and has higher performance than DRAM and NAND.

However, to date, it has been too expensive to mass produce.

Based in Silicon Valley, California, Grandis has about 25 employees and was founded in 2002.