Elpida Develops 0.10-micron, 1Gbit DDR2-533 Component
Elpida Memory Inc. today announced the development of a 0.10-micron, 1Gbit DDR2 SDRAM component at 53Mbits/sec. The 1Gb device is designed to operate at an effective bit rate of 533MHz. Operation, which the Japanese DRAM maker claimed is the first of its kind and the fastest and highest density main memory available for server applications.
The component is the latest addition to Elpida's current DDR2 product portfolio that also includes a 512Mbit DDR2 device.
According to a statement of Elpida's president, Yukio Sakamoto, 1 Gigabit is the next major milestone for DRAM density and DDR2 is the most advanced DRAM architecture available .
The devices also allow either DDR or DDR2 to be produced on the same chip, according to the company.
Elpida expects the 1Gbit DDR2 SDRAM devices to form the basis for a number of high-density modules, including 4Gbyte registered dual in-line memory modules (DIMMs) for servers and workstations,2Gbyte unbuffered DIMMs for desktops, and 2Gbyte small-outline DIMMs (SO-DIMMs) for notebooks.The company also said it will apply the 0.10 process and circuit technologies to 512Mbit DDR2 products.
Volume output of the 1Gb 100nm part is pencilled in for early 2004.
According to a statement of Elpida's president, Yukio Sakamoto, 1 Gigabit is the next major milestone for DRAM density and DDR2 is the most advanced DRAM architecture available .
The devices also allow either DDR or DDR2 to be produced on the same chip, according to the company.
Elpida expects the 1Gbit DDR2 SDRAM devices to form the basis for a number of high-density modules, including 4Gbyte registered dual in-line memory modules (DIMMs) for servers and workstations,2Gbyte unbuffered DIMMs for desktops, and 2Gbyte small-outline DIMMs (SO-DIMMs) for notebooks.The company also said it will apply the 0.10 process and circuit technologies to 512Mbit DDR2 products.
Volume output of the 1Gb 100nm part is pencilled in for early 2004.
