FDSOI

Samsung Electronics Announced MBCFET Transistor Structure For Advanced Foundry Nodes

May 15,2019 0 ant

Samsung has created and patented the proprietary MBCFET (Multi-Bridge Channel Field Effect Transistor), an optimized version of the GAA transistor, laying out the foundation for...

Samsung Foundry Collaborates With Arm on 18nm FDSOI

Mar 22,2019 0 ant

Samsung Foundry Collaborates With Arm on 18nm FDSOI

Arm and Samsung Foundry announced a comprehensive, foundry-sponsored physical IP platform, including an eMRAM compiler at 18FDS (18nm...

Samsung Starts Commercial Shipment of eMRAM Product Based on 28nm FD-SOI Process

Mar 6,2019 0 ant

Samsung Electronics has commenced mass production of its first commercial embedded magnetic random access memory (eMRAM) product based on the company’s 28-nanometer(nm) fully-depleted silicon-on-insulator (FD-SOI)...

Globalfoundries to Work With Fraunhofer on FDSOI

Sep 12,2018 0

After its recent failure with the 7nm FinFET, Globalfoundries and the Fraunhofer IPMS research institute are expanding their 13-year development cooperation in Dresden and will...

GLOBALFOUNDRIES Surpasses $2 Billion in Design Win Revenue on 22FDX Technology

Jul 9,2018 0

Semiconductor foundry company GLOBALFOUNDRIES says that its 22nm FD-SOI (22FDX) technology has delivered more than two billion dollars of client design win revenue, and that...

GLOBALFOUNDRIES and Chengdu Invest in China-based FDX FD-SOI Design Centers

May 23,2017 0

GLOBALFOUNDRIES and the Chengdu municipality today announced an investment to spur innovation in China's semiconductor industry.

The partners plan to build a world-class...

FD-SOI Could Emerge As A Cheaper Alternative To FinFET Processes

Sep 13,2016 0

Fully depleted silicon-on-insulator (FD-SOI) could grow rapidly in the wake of Globalfoundries’ plans for a 12nm process, and paplications processors and modems could...