SK Hynix is pushing its 'Managed Dram Solution' (MDS) DRAM technology as a next global standard in response to the 3D CrossPoint Memory tech developed by of Intel and Micron.

"Because Intel’s 3D CrossPoint Memory is a product that combines strengths of DRAM and NAND-Flash, particular server markets can be encroached when a solution that can be used by just plugging into a slot for DRAM comes out." said SK Hynix Kim Jin-kook, during a speech at the Korea Semiconductor Test Association event that was held on June 21st.

3D XPoint is a variant of a chip jointly promoted by Intel and Micron Technology. It is the new breed that has combined strengths in DRAM and NAND flash chips, helping the chip expand data storage capacity and power efficiency.

The MDS technology uses Logic Chip and can overcome expensive cost and nonvolatility that are weaknesses of widely-used D-RAMs. Although a method of technology has not been shown in detail yet, experts predict that this technology will implement high capacity by combining many D-RAMs logically with Logic Chip.

With MDS installed, a system theoritically operates even without DRAM. Although it is slower than widely-used DRAMs, Sk Hynix hopes that MDS will replace current DRAMs in server applications which require high capacity and nonvolatility.

Kim said that his company plans to present MDS to JEDEC (Joint Electron Device Engineering Council, and that plans to commercialize it in 2018.

SK hynix, the world's No. 2 memory chip producer, could need Samsung's help in order to take on the Intel-Micron alliance.

"3D XPoint could be a real threat. But not now. We are mulling various options to take on Intel in the memory chip market. Samsung may team up with SK hynix if we have to. But no specific discussions are being had at the moment," a source at Samsung said.