Wednesday, December 13, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Toshiba and Western Digital Reach Settlement, Agree to Strengthen Flash Memory Collaboration
Twitter Makes It Easier For Users to Create Threads
Tsinghua to Invest in China-based Lite-On Storage Plant
Facebook to Book Advertising Revenue Locally Following Pressure
New Radeon Software Adrenalin Edition Provides Amped-Up Connected Gaming
Nintendo Says Switch Sells 10 Million Worldwide
Toshiba Unveils Embedded NAND Flash Memory Products for Automotive Applications
FCC to Hand Over Internet Oversight to FTC
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 23, 2015
Samsung, Sk Hynix To Present HBM2 DRAM Development


Samsung Electronics and SK Hynix are competing on the development of HBM2 (High Bandwidth Memory2) DRAM technology, and plan to announce new papers at 2016 International Solid-State Circuits Conference (ISSCC).

HBM is a standard for fast DRAM that uses TSV (Through Silicon Via) technology and greatly ncreases bandwidth greatly. It is predicted that HBM DRAM will be used for next-generation’s GPU, Super-Computer, server, and network devices and is expected that it will contribute in improving performance by greatly decreasing bottleneck situation during data processing.

Both Samsung Electronics and SK Hynix are finishing up development of HBM2 DRAMs. It is predicted that both businesses’ HBM2 DRAMs will be mass-produced in first half of 2016 at the earliest.

HBM layers DRAM Silicon Die through TSV technology and widens bandwidth. Early HBM had used 1.2 V operating voltage and exchanged data at 1 Gbps at 1,024 I/O. It is possible to process 128 GB of data per second and it is 4 times faster than previous GDDR5 (processes 28 GB of data per second). Speed for HBM2 will be even faster as it can process 256 GB of data per second by exchanging data at 2 Gbps.

Process of standardization for HBM DRAM was led by SK Hynix and AMD. HBM that was mass-produced by SK Hynix was first loaded into AMD’s GPU R9 Fury. For HBM2, many other businesses such as Samsung Electronics, NVIDIA and others have participated in standardization.

Samsung Electronics and SK Hynix will make announcements about their successes in developing HBM2 D-RAM standard at 2016 International Solid-State Circuits Conference (ISSCC) that will be held in San Francisco on the 31st of January. SK Hynix will introduce 64 GB HBM2 product while Samsung Electronics will introduce product that can exchange 307 GB of data per second.




Previous
Next
Nvidia Loses Graphics Patent Case Against Samsung        All News        Google To Release New Messaging App
Biostar Offers Skylake Overclocking Tool     PC Parts News      Latest Nero TuneItUp Promises To Fix PC Problems

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung, SK Hynix and Micron Lead the Server DRAM Market
SK hynix Reports Record Profits for Q3
SK Hynix to Invest 395 billion yen in Toshiba chip unit
SK hynix Reports Record Q2 Results on Strong Chip Sales
SK Hynix and Micron Try To Catch up With Samsung in 10nm DRAM Production
Broadcom, KKR and SK Hynix - Bain Join Final Bidding Round for Toshiba's Memory Unit
SK Hynix Reports Strong First Quarter Results
SK Hynix Introduces First 72-Layer 3D NAND Flash
SK Hynix Offers More Than $9 billion for Toshiba Chip Unit: report
Toshiba Informs SK hynix of New Plan to Sell Memory Business
SK hynix Bids for Stake in Toshiba's Memory Chip Business
SK Hynix Chalks Operating Profit in 4Q, Outlines Plans For 2017

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .