Samsung Electronics said Tuesday it has started mass production of 8-gigabit mobile memory chips based on its 20-nanometer technology that it said are faster at data handling and better in saving power. The 8-gigabit, low power double data rate 4 (LPDDR4) mobile dynamic random access memory (DRAM) is capable of data processing twice as fast as the predecessor, the LPDDR3, and is 40 percent more energy-efficient, the company said. The new 8Gb LPDDR4 chip allows a 4 gigabyte (GB) LPDDR4 package to be created.

Due to an I/O data rate of up to 3,200 megabits per second (Mbps), which is two times faster than a typical DDR3 DRAM used in PCs, the new 8Gb LPDDR4 can support UHD video recording and playback and continuous shooting of high-resolution images with over 20 megapixels.

The LPDDR4 mobile memory chip’s operating voltage was reduced to 1.1V from that of LPDDR3 memory chips, which makes the new Samsung chip the lowest power memory solution available for large-screen smartphones and tablets, and high-performance network systems. For example, in case of a 2GB package, an 8Gb LPDDR4-based 2GB package can save up to 40 percent of power compared to a 4Gb LPDDR3-based 2GB package, due to low operating voltages and faster processing.

By adopting new proprietary low-voltage swing-terminated logic (LVSTL) for its I/O signaling, Samsung has also further reduced the new LPDDR4 chip’s power consumption while enabling high-frequency operations at low voltages for optimal power efficiency.

Samsung started providing 2GB LPDDR4 and 3GB LPDDR4 DRAM packages this month based on 8Gb and 6Gb LPDDR4 dies, respectively, in support of global application processor vendors and mobile device manufacturers, and will provide 4GB LPDDR4 packages in early 2015.