Monday, September 25, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Foundry Tapes Out eMRAM Test Chip Based on 28nm FD-SOI Process
8th Generation Intel Core "Coffee Lake" Desktop Processors are Launching today
Showa Denko Starts Shipments of 2.5-Inch 1 TB HD Media
Russian Firm Unveils 'surveillance-proof' Smartphone
Intel Kills Project Alloy VR Headset
New 4K Apple TV will Only Stream iTunes 4K Content
China-backed Canyon Bridge Buys Imagination for £550 million
iPhone 8 Teardown
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, July 02, 2014
Samsung Maintains Its Global NAND Flash Leadership


Samsung Electronics maintained its position as the top-ranked NAND flash memory chipmaker in the world, followed by Toshiba, Micron Technology and SK Hynix.

According to market research firm IHS iSuppli on July 1, Samsung Electronics turned over US$2.84 billion in Q1 2014, and remains the top-ranked NAND flash memory chipmaker in the world with a 37.4 percent share.

Toshiba follows with a 31.9 percent share and US$1.778 billion in sales. It narrowed the gap with Samsung in the market to 5.5 percent.

Micron Technology was in third place with a 20.1 percent share and US$1.121 billion in sales, followed by SK Hynix with a 10.6 percent market share and US$592 million in sales.

Meanwhile, the two Korean firms comprised 65.0 percent of the DRAM market in Q1. Samsung, SK Hynix, and Micron Technology dominate the DRAM market, while the NAND flash market is dominated by the three companies plus Toshiba.

Samsung may also widen the gap with Toshiba after Q2, once manufacturing output in its 3D V-NAND production facility in Xi'an, China is reflected in data.

Toshiba has made an investment of 7 trillion won (US$6.9 billion) in its facility to mass-produce 3D V-NAND flash memory chips.



Previous
Next
IBM Hopes Nanotube Transistors Are Coming Aroud 2020        All News        Japan Universities To Build New Supercomputers
IBM Hopes Nanotube Transistors Are Coming Aroud 2020     General Computing News      Industry Alliances Fight Over The Future Of Connected Home

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Showcases 10 nm Updates, a new aspect for Moore's Law, FPGA Progress and 64-Layer 3D NAND for Data Center
Samsung Introduces Tbit V-NAND Memory Solutions
Western Digital Announces Four-bits-per-cell Technology On 3D NAND
Toshiba Develops First 3D Flash Memory with TSV Technology
Toshiba Announces 96-Layer 3D Flash Memory and 64-Layer QLC 3D Flash Memory
Western Digital Announces First 96-Layer 3D NAND Technology
Samsung Ramps up 64-Layer V-NAND Memory Production
Samsung Electronics Is Considering Adding Second 3D NAND Line in China
Toshiba Demonstrates 64-Layer BiCS FLASH on Client NVM Express SSD
Western Digital Introduces iNAND 7250A Embedded Storage Device
3D-NAND to Become Mainstream This Year
SK Hynix Introduces First 72-Layer 3D NAND Flash

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .