Sunday, July 23, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Lyft Forms Autonomous Vehicle Unit
More Than Half German Companies Hit by Sabotage, Spying, BSI says
Intel, Microsoft and Amazon Side with Apple in Qualcomm's iPhone Ban Dispute
Samsung Galaxy Note 8 to debut on Aug. 23
Apple Turns to LG Chem for iPhone 9 Batteries
Microsoft Reports Strong Profit on Cloud Demand
Intel Introduces Movidius Neural Compute Stick
TSMC InFO packaging Enters Second Generation
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, July 02, 2014
Samsung Maintains Its Global NAND Flash Leadership


Samsung Electronics maintained its position as the top-ranked NAND flash memory chipmaker in the world, followed by Toshiba, Micron Technology and SK Hynix.

According to market research firm IHS iSuppli on July 1, Samsung Electronics turned over US$2.84 billion in Q1 2014, and remains the top-ranked NAND flash memory chipmaker in the world with a 37.4 percent share.

Toshiba follows with a 31.9 percent share and US$1.778 billion in sales. It narrowed the gap with Samsung in the market to 5.5 percent.

Micron Technology was in third place with a 20.1 percent share and US$1.121 billion in sales, followed by SK Hynix with a 10.6 percent market share and US$592 million in sales.

Meanwhile, the two Korean firms comprised 65.0 percent of the DRAM market in Q1. Samsung, SK Hynix, and Micron Technology dominate the DRAM market, while the NAND flash market is dominated by the three companies plus Toshiba.

Samsung may also widen the gap with Toshiba after Q2, once manufacturing output in its 3D V-NAND production facility in Xi'an, China is reflected in data.

Toshiba has made an investment of 7 trillion won (US$6.9 billion) in its facility to mass-produce 3D V-NAND flash memory chips.



Previous
Next
IBM Hopes Nanotube Transistors Are Coming Aroud 2020        All News        Japan Universities To Build New Supercomputers
IBM Hopes Nanotube Transistors Are Coming Aroud 2020     General Computing News      Industry Alliances Fight Over The Future Of Connected Home

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Develops First 3D Flash Memory with TSV Technology
Toshiba Announces 96-Layer 3D Flash Memory and 64-Layer QLC 3D Flash Memory
Western Digital Announces First 96-Layer 3D NAND Technology
Samsung Ramps up 64-Layer V-NAND Memory Production
Samsung Electronics Is Considering Adding Second 3D NAND Line in China
Toshiba Demonstrates 64-Layer BiCS FLASH on Client NVM Express SSD
Western Digital Introduces iNAND 7250A Embedded Storage Device
3D-NAND to Become Mainstream This Year
SK Hynix Introduces First 72-Layer 3D NAND Flash
Western Digital Releases New iNAND 7350 Storage Solution Built on 3D NAND
Toshiba Starts Sampling 64-Layer, 512-gigabit 3D Flash Memory
Western Digital Introduces First 512 Gigabit 64-Layer 3D NAND Chip

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .