Friday, December 09, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung To Make Chips For Tesla Cars
Google Opens its Digital Assistant to Developers
BlackBerry Unveils BlackBerry Secure For IoT Mobile Security
ARM Physical IP for TSMC 7nm Process Technology Now Available
HTC Launches Vive Studios, Debuts "Arcade Saga" Title
Radeon Software Crimson ReLive Edition Brings Support For Chill, Along With New Features
Microsoft Unveils Windows 10 for Qualcomm Chips, "Project Evo" PCs For Mixed Reality And Gaming
Samsung's First Foldable Phone May Actually Not Have A Foldable Screen
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, July 02, 2014
Samsung Maintains Its Global NAND Flash Leadership


Samsung Electronics maintained its position as the top-ranked NAND flash memory chipmaker in the world, followed by Toshiba, Micron Technology and SK Hynix.

According to market research firm IHS iSuppli on July 1, Samsung Electronics turned over US$2.84 billion in Q1 2014, and remains the top-ranked NAND flash memory chipmaker in the world with a 37.4 percent share.

Toshiba follows with a 31.9 percent share and US$1.778 billion in sales. It narrowed the gap with Samsung in the market to 5.5 percent.

Micron Technology was in third place with a 20.1 percent share and US$1.121 billion in sales, followed by SK Hynix with a 10.6 percent market share and US$592 million in sales.

Meanwhile, the two Korean firms comprised 65.0 percent of the DRAM market in Q1. Samsung, SK Hynix, and Micron Technology dominate the DRAM market, while the NAND flash market is dominated by the three companies plus Toshiba.

Samsung may also widen the gap with Toshiba after Q2, once manufacturing output in its 3D V-NAND production facility in Xi'an, China is reflected in data.

Toshiba has made an investment of 7 trillion won (US$6.9 billion) in its facility to mass-produce 3D V-NAND flash memory chips.



Previous
Next
IBM Hopes Nanotube Transistors Are Coming Aroud 2020        All News        Japan Universities To Build New Supercomputers
IBM Hopes Nanotube Transistors Are Coming Aroud 2020     General Computing News      Industry Alliances Fight Over The Future Of Connected Home

Get RSS feed Easy Print E-Mail this Message

Related News
A Closer Look At SK Hynix's 3D NAND
SK hynix To Start Mass Production Of 48-layer 3D-NAND Chips
Toshiba Expands 3D Flash Memory Production Capacity In New Fabrication Facility at Yokkaichi
NAND Flash Prices on Upswing in Fourth Quarter Due To Supply Shortage
Samsung to Start Making 64-layer 3-D Flash memory for Smartphones
Toshiba Expands 24nm SLC Flash Family with 16Gb Offering
Micron Announces QuantX Branding For 3D XPoint Memory, Releases 3D NAND flash for Mobile Devices
Toshiba Announces New BG SSDs with 3-Bit-Per-Cell TLC BiCS FLASH
Western Digital Announces First 64 Layer 3D NAND Technology
Toshiba To Produce First 64-layer 3D NAND Flash Memory Chip
China To Invest In 3D NAND Flash Plant
Samsung Showcases New BGA, Enterprise And Consumer SSDs

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .