Monday, February 27, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Oppo Brings 5X Optical Zoom To Dual-camera Smartphones
Kingston Ships 2TB USB Flash Drive
One-Blue Lowers Blu-ray Licensing Fees
Twitch to Sell Video Games on Streaming Site
Personal Computing Devices Outlook Remains Mildly Negative, Detachable Tablets And Convertible Notebooks See Growth
Gionee Launch New Selfie-focused A1 And A1 Plus Smartphones
RICOH R 360-degree, Live Streaming Camera Available For Pre-order
SD Association Adds Higher App Performance Class And Low Voltage Signaling
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, February 18, 2014
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs


Samsung Electronics announced the development of a "Vertical NAND (V-NAND)" 3D NAND flash memory that endures 35,000 write/erase cycles as an enterprise SSD.

Speaking earlier this month at the International Solid-State Circuits Conference (ISSCC) 2014, Samsung's researchers described the new V-NAND memory, which is an MLC (multi-level cell) product using 24 memory cell layers and has a capacity of 128 Gbits per chip. The chip are is 133mm2 and its bit density is 0.96 Gbits/mm2, which Samsung claims is the highest in the industry.



However, the manufacturing cost of the V-NAND remains higher than the latest planar NAND, requiring new capital investments. Samsung says that the next generations of V-NAND will feature with more memory cell layers, making its cost comparable to planar NAND in cost. The company plans to release 1-Tbit V-NAND sometime in 2017.

The company targets the latest technology at high-performance applications such as enterprise SSDs. Whan applied to an enterprise SSD, the new V-NAND realizes a write/erase endurance of 35,000 cycles with a write throughput of 36 Mbytes per second, according to Samsung. For embedded applications, it will realize a write/erase endurance of 3,000 cycles with a write throughput of 50 Mbytes per second.

At ISSCC 2014, Micron Technology also announced a 16nm 128Gbit NAND flash memory based on the planar NAND technology. This chip was larger (173.3mm2) that Samsung's V-NAND memory.

The battle between 2D NAND and 3D NAND has just begun. The current manufacturing cost of the V-NAND is higher than that of the latest planar NAND. On the other hand, it is not clear how further the miniaturization of planar NAND can go, as microfabrication lead to an increased in bit-error ratio and strong error correction technologies would be required.




Previous
Next
Sony PS4 Sales Surpass 5.3 Million Units        All News        Researchers Develop Electrode That Can Be Used In Stretchable Electronic Devices
Intel Releases Xeon Processor E7 v2 Family For Big Data Analytics     PC Parts News      Spansion Debuts Breakthrough Interface and World's Fastest NOR Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Western Digital Releases New iNAND 7350 Storage Solution Built on 3D NAND
MWC: Samsung Launches The Galaxy Tab S3, Galaxy Book, And New Gear VR With Controller
Samsung to Showcase Galaxy Tab S3 and Galaxy Book 2 Tablets, A New Gear VR at MWC
Samsung, Apple To Focus On Bio Authentication Services
Secure Folder Now Available for Galaxy S7, Galaxy S7 edge
Samsung Introduces Measures to Enhance Transparency in Financial Donations
Samsung Mass Produces 10nm Exynos 9 Application Processor
Toshiba Starts Sampling 64-Layer, 512-gigabit 3D Flash Memory
Samsung to Exhibit New VR Projects at Mobile World Congress 2017
LG Display Confirms LCD Supply Deal With Rival Samsung
New Samsung Galaxy Tab S Series To Include Windows Version
Samsung Chief Arrested

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .