Thursday, April 26, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
AMD's Revenue increased 40 Percent year-over-year
Qualcomm's Quarterly Profit Falls 51.5 Percent
Facebook Reports Quarterly Profit Fueled by Mobile Ads, No Impact From Analytica Scandal
Philips Momentum 43" HDR Monitor Achieves 1,000 nits of Brightness
China's Pushes into Semiconductor Market
Amazon Alexa and New Echo Dot Speaker Target Kids
Hotel Room Keys Can be Hacked, F-Secure Says
Nokia Launches Edge Cloud Data Center Solution for the 5G Era
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, February 18, 2014
Samsung Announces High-endurance 128Gb V-NAND Flash Memory For Enerprise SSDs


Samsung Electronics announced the development of a "Vertical NAND (V-NAND)" 3D NAND flash memory that endures 35,000 write/erase cycles as an enterprise SSD.

Speaking earlier this month at the International Solid-State Circuits Conference (ISSCC) 2014, Samsung's researchers described the new V-NAND memory, which is an MLC (multi-level cell) product using 24 memory cell layers and has a capacity of 128 Gbits per chip. The chip are is 133mm2 and its bit density is 0.96 Gbits/mm2, which Samsung claims is the highest in the industry.



However, the manufacturing cost of the V-NAND remains higher than the latest planar NAND, requiring new capital investments. Samsung says that the next generations of V-NAND will feature with more memory cell layers, making its cost comparable to planar NAND in cost. The company plans to release 1-Tbit V-NAND sometime in 2017.

The company targets the latest technology at high-performance applications such as enterprise SSDs. Whan applied to an enterprise SSD, the new V-NAND realizes a write/erase endurance of 35,000 cycles with a write throughput of 36 Mbytes per second, according to Samsung. For embedded applications, it will realize a write/erase endurance of 3,000 cycles with a write throughput of 50 Mbytes per second.

At ISSCC 2014, Micron Technology also announced a 16nm 128Gbit NAND flash memory based on the planar NAND technology. This chip was larger (173.3mm2) that Samsung's V-NAND memory.

The battle between 2D NAND and 3D NAND has just begun. The current manufacturing cost of the V-NAND is higher than that of the latest planar NAND. On the other hand, it is not clear how further the miniaturization of planar NAND can go, as microfabrication lead to an increased in bit-error ratio and strong error correction technologies would be required.




Previous
Next
Sony PS4 Sales Surpass 5.3 Million Units        All News        Researchers Develop Electrode That Can Be Used In Stretchable Electronic Devices
Intel Releases Xeon Processor E7 v2 Family For Big Data Analytics     PC Parts News      Spansion Debuts Breakthrough Interface and World's Fastest NOR Flash Memory

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Brings 10nm-class 16Gb LPDDR4X DRAM for Automobiles
Samsung Unveiled New Onyx Cinema LED Screen at CinemaCon
Samsung's Fastest 970 PRO and EVO NVMe SSDs Are Launching Worldwide
Samsung QLED TVs Receive '100 Percent Color Volume' Certification
Samsung Not Interested in Nokia's Health Unit
Samsung to Release Its First MicroLED TVs in 2018
Samsung Galaxy J2 Pro Smartphone Has no Data Connectivity
Samsung 360 Round 3D Video Camera and Samsung DeX Pad Now Available
Samsung Reports Profit on High Memory Sales
Samsung Launches the Notebook Odyssey Z for Gaming
Samsung Notebook 5 and Notebook 3 Target General Users
Samsung Breaks Ground in New Memory fab Line in Xian

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .