Tuesday, September 16, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Nvidia SHIELD Tablet Gets 32GB Storage and 4G LTE
Micron M600 SSD Released With Dynamic SLC Cache
Orange to Buy Spanish Operator Jazztel
US Government Data Requests Increased: Google
Wi-Fi Alliance Enhances Wi-Fi CERTIFIED Wi-Fi Direct
Canon Develops New Wireless Device For Storing Photos
Google Adds A Steering Wheel To Its Self-Driving Cars
MediaTek Launches Low -power MT7628 SoC for Routers And IoT Gateways
Active Discussions
help questions structure DVDR
Made video, won't play back easily
Questions durability monitor LCD
Questions fungus CD/DVD Media, Some expert engineer in optical media can help me?
CD, DVD and Blu-ray burning for Android in development
IBM supercharges Power servers with graphics chips
Werner Vogels: four cloud computing trends for 2014
Video editing software.
 Home > News > PC Parts > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, December 06, 2011
Intel, Micron Introduce First 128Gb NAND Device and Mass Production of 64Gb 20nm NAND


Intel and Micron today announced the world's first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND.

Developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s).

The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures.

The companies claim that their 20nm NAND planar cell structure overcomes the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. This allows for identical 3-5K write cycling as found in the 25nm MLC NAND.

"The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production," the companies said in a statement.

Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012. Samples of the 128Gb device will be available in January, closely followed by mass production in the first half of 2012.


Previous
Next
EC To Investigate Sales Of e-books        All News        Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC
Super Talent Introduces Enthusiast SSD Line     PC Parts News      Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC

Get RSS feed Easy Print E-Mail this Message

Related News
Micron M600 SSD Released With Dynamic SLC Cache
Intel Offers Developers Software Tools, Outlines PC Evolution Across New Form Factors
HGST Introduces NVMe PCIe SSDs, 10TB HDD
Intel Unveils New Developer Tools, Future Technologies Tablets, Analytics, Wearable Devices and PCs at IDF 2014
New Intel Xeon E5-2600 v3 Processors Released
Intel Turns To Fashionable Wearables With Collaboration With Fossil Group
New Intel Core M Processor Coming In Tablets, Hybrids
Latest Intel Graphics Driver Update Boosts Performance
Opening Ceremony and Intel Reveal MICA Accessory
Intel Hopes To Improve Its Mobile Business With Ex-Qualcomm exec
Intel Unleashes its First 8-Core Desktop Processor For Gaming
Intel Introduces World's Smallest Standalone 3G Modem

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .