Saturday, March 24, 2018
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Tesla and Mozilla Among Businesses That Paused Facebook
Low-Cost iPad For Classrooms Coming Next Week
Google Says Publishers are Responsible for Getting Users' Consent to Comply With New EU Privacy Law
Samsung Electronics Shareholders Approve Stock Split, Company Talks About Future for Smartphones, Chips
Streaming Services Keep Driving Music Business
Huawei Could Release 512GB and Blockchain-Ready Smartphone
Sony Announces Pricing and Availability for A8F BRAVIA OLED TVs and 85" Class X900F and X850F Series 4K HDR TVs
New Samsung Exynos 7 Series 9610 Mobile Processor focuses on Multimedia
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, December 06, 2011
Intel, Micron Introduce First 128Gb NAND Device and Mass Production of 64Gb 20nm NAND

Intel and Micron today announced the world's first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND.

Developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s).

The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures.

The companies claim that their 20nm NAND planar cell structure overcomes the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. This allows for identical 3-5K write cycling as found in the 25nm MLC NAND.

"The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production," the companies said in a statement.

Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012. Samples of the 128Gb device will be available in January, closely followed by mass production in the first half of 2012.

EC To Investigate Sales Of e-books        All News        Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC
Super Talent Introduces Enthusiast SSD Line     PC Parts News      Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC

Get RSS feed Easy Print E-Mail this Message

Related News
Intel and Facebook Unveil Next Generation OCP Twin Lakes 1S Server
Microsoft Announces Project Denali SSD For Cloud-scale Applications
Marvell Introduces New NVMe Switch and SSD Controllers
Lite-On to Unveil New NVRAM Hybrid Solid-State Drive at OCP 2018
Samsung Introduces 8TB PM883 SATA SSD For Datacenters
Nimbus Data Launches 100 Terabytes SSD With Unlimited 5 Years Endurance
Toshiba Adds 64-layer BiCS CD5, XD5 and HK6-DC Models to Data Center SSD Lineup
Intel to Bring Hardware-based Protection to Data Center and PC Processors
Microsoft Uses AI to Match Human Performance in Translating News from Chinese to English
Samsung Expands Xian Flash Memory Plant
SSD Price Drop Will Drive the Adoption Rate of SSD in Notebooks
Buying Broadcom Could be an Option for Intel, If Qualcomm Deal Fail

Most Popular News
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .