Tuesday, July 26, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
OLED to Become Leading Smartphone Display Technology
Softbank's Pepper Robot Now Available In Taiwa
Samsung Wireless Charging Pads Support Charging Of Multiple Devices At once
Apple's Car project To Be Led By Veteran Bob Mansfield
Twitter Live Streaming To Include MLB Games, NHL Games and Nightly Highlights Program
iPhone 7 Rumored To Launch September 16th
Viber Now Available On All Windows 10 Devices
Verizon Buys Yahoo's Core Business For $4.83 billion
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, December 06, 2011
Intel, Micron Introduce First 128Gb NAND Device and Mass Production of 64Gb 20nm NAND


Intel and Micron today announced the world's first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND.

Developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s).

The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures.

The companies claim that their 20nm NAND planar cell structure overcomes the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. This allows for identical 3-5K write cycling as found in the 25nm MLC NAND.

"The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production," the companies said in a statement.

Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012. Samples of the 128Gb device will be available in January, closely followed by mass production in the first half of 2012.


Previous
Next
EC To Investigate Sales Of e-books        All News        Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC
Super Talent Introduces Enthusiast SSD Line     PC Parts News      Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC

Get RSS feed Easy Print E-Mail this Message

Related News
Lite-On Expands Its SSD Storage Manufacturing
Super Talent Launches The PCIe Nova U.2 SSDs
Intel Kaby Lake Processors Coming Soon
Slow PC Market Keeps Hurting Intel
Toshiba To Produce First 64-layer 3D NAND Flash Memory Chip
Samsung Unveils 4TB 850EVO SSD
Project Malmo, Which Lets Researchers Use Minecraft for AI research, Makes Public Debut
Micron Introduces SLC NAND Flash for IoT and Automotive
Google Says SSDs Not Perfectly Stable Yet For Data Centers
ADATA Premier SP550 SSDs M.2 SSD Released
BMW Group, Intel and Mobileye Team Up to Bring Autonomous Driving to Streets by 2021
Micron To Reduce Workforce Following Slow Third Quarter Results

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .