Monday, December 05, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Sent Letter NHTSA Asking About Autonomous Vehicle Guidelines
Apple Blames Battery For Random iPhone 6s Shutdowns
Microsoft Stores Reveal Xbox Discounts And Offers
Researcher Bypasses The iOS Activation Lock
Facebook To Offer $20 million To Improve Silicon Valley Communities
Xiaomi Launches Voice -controller Mi Wi-Fi Speaker
Xiaomi "Denies" Mi MIX Nano Existence
Nokia D1C Specs Leak
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Intel, ...
Last 7 Days News : SU MO TU WE TH FR SA All News

Tuesday, December 06, 2011
Intel, Micron Introduce First 128Gb NAND Device and Mass Production of 64Gb 20nm NAND


Intel and Micron today announced the world's first 20 nanometer (nm), 128 gigabit (Gb), multilevel-cell (MLC) device. The companies also announced mass production of their 64Gb 20nm NAND.

Developed through Intel and Micron's joint-development venture, IM Flash Technologies (IMFT), the new 20nm monolithic 128Gb device is the first in the industry to enable a terabit (Tb) of data storage in a fingertip-size package by using just eight die. It also provides twice the storage capacity and performance of the companies' existing 20nm 64Gb NAND device. The 128Gb device meets the high-speed ONFI 3.0 specification to achieve speeds of 333 megatransfers per second (MT/s).

The companies also revealed that the key to their success with 20nm process technology is due to an innovative new cell structure that enables more aggressive cell scaling than conventional architectures.

The companies claim that their 20nm NAND planar cell structure overcomes the inherent difficulties that accompany advanced process technology, enabling performance and reliability on par with the previous generation. This allows for identical 3-5K write cycling as found in the 25nm MLC NAND.

"The planar cell structure successfully breaks the scaling constraints of the standard NAND floating gate cell by integrating the first Hi-K/metal gate stack on NAND production," the companies said in a statement.

Intel and Micron noted that the December production ramp of their 20nm 64Gb NAND flash product will enable a rapid transition to the 128Gb device in 2012. Samples of the 128Gb device will be available in January, closely followed by mass production in the first half of 2012.


Previous
Next
EC To Investigate Sales Of e-books        All News        Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC
Super Talent Introduces Enthusiast SSD Line     PC Parts News      Renesas Receives USB-IF Certification for its USB 3-SATA3 Bridge SoC

Get RSS feed Easy Print E-Mail this Message

Related News
Intel Extreme Masters Season 11 World Championship Returns to Katowice, Poland
Intel Teams Up With Delphi and Mobileye for Self-Driving Cars
A Closer Look At SK Hynix's 3D NAND
Go Master Cho Wins Final Game Against DeepZenGo AI Platform
Intel Unveils Strategy for Artificial Intelligence
ADATA SD700 External SSD Is Dust, Water and Shock Resistant
Intel Prepares its AI Strategy, Announces New Xeon Chips And An FPGA Card
Plextor Releases Ultraportable EX1 Portable SSD
GE Buts Artificial Intelligence Startups
Intel Could Add Wi-Fi and USB 3.1 Support In Future Chipsets
Facebook Turns To AI To Offer New Experiences
SK hynix To Start Mass Production Of 48-layer 3D-NAND Chips

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .