Tuesday, October 17, 2017
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
New Fall Update for Xbox One starting to roll out today
Windows OS is Protected Against KRACK Wi-Fi Attacks
First iPhone X Devices Have Left Foxconn's Factory
Noctua Introduces Chromax Line Fans, Cables and Heatsink Covers
HUAWEI Mate 10 and HUAWEI Mate 10 Pro Feature LTE Cat 18 , First Kirin AI Processor
Adobe Patches Patches Critical Security Hole in Flash software
Samsung Introduces Cellular IoT Mobile Device to Track Your Pets, Children, or Personal Items
SoftBank Agrees on T-Mobile - Sprint Merger: report
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Hynix a...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, July 13, 2011
Hynix and Toshiba To Develop MRAM


Hynix Semiconductor and Toshiba have agreed to strategic collaboration in the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next generation memory device.

Once technology development is successfully completed, the companies intend to cooperate in manufacturing MRAM products in a production joint venture. Hynix and Toshiba have also extended their patent cross licensing and product supply agreements.

Toshiba recognizes MRAM as an important next-generation memory technology with the potential to sustain future growth in its semiconductor business. Hynix has a cutting-edge memory technology, most notably in manufacturing process optimization and cost competitiveness.

MRAM uses magnetic properties to store data. Unlike DRAM, which distinguishes between 0 and 1 by passing an electron through a capacitor, data in MRAM can be determined by measuring the difference in resistance from magnetization on a magnetic tunnel junction (MTJ). Data is written and saved by reorienting the magnetization of a thin magnetic layer in a tunnel magnetoresistance (TMR) element using a spin-polarized current.

The non-volatile, power efficient memory, operates at ultra-high speed.

Applications requiring high-density memory are expected to take advantages of MRAM, and major initial applications are expected in the mobile market, which notably demands low power consumption.

Developing a new technology is always prone to risk. One reason for merging the necessary resources and expertise from Hynix and Toshiba is to minimize risk and to accelerate the pace of MRAM commercialization.

"MRAM is a rare gem full of exciting properties, like ultra high-speed, low power consumption, and high capacity, and it will play the role of key factor in driving advances in memories. It will also be a perfect fit for growing consumer demand in more sophisticated smart phones. MRAM is our next growth platform," said Oh Chul Kwon, Hynix's CEO.

"We believe that MRAM has huge potential as highly scalable non-volatile RAM," said Kiyoshi Kobayashi, Corporate Senior Vice President of Toshiba Corporation, and President and CEO of Toshiba's Semiconductor and Storage Products Company. "We will strongly promote initiatives in integration of storage solutions including MRAM, NAND, and HDD. The MRAM joint development program with Hynix is one of the key steps to support our efforts."


Previous
Next
NTI Releases Shadow 5 Software For Next Version of Mac OS X        All News        Netflix Introduces New Plans and Announces Price Changes
SuperTalent Introduces Consumer Focused SATA III SSD     PC Parts News      WD To Include Windows Storage Server 2008 R2 Essentials In storage Solutions

Get RSS feed Easy Print E-Mail this Message

Related News
New Toshiba TR200 3D NAND SSDs Offer an Affordable Alternative to Hard Disks
Toshiba to Further Invest in Production Equipment for Fab 6 at Yokkaichi Operations
Western Digital Provides Its Aspect on Latest Developments Related to the Sandisk JV with Toshiba
Toshiba Signs Deal to Sell Chip Unit to Bain-led Group
SK Hynix to Invest 395 billion yen in Toshiba chip unit
Western Digital Tries to Block Toshiba's $18 Billion Memory Chip Unit Sale
Toshiba MG06 Series Includes 10TB Enterprise Capacity SATA HDD
Toshiba Formalizes Chips Sale to Bain Consortium, WD Steps up Legal Action
Toshiba Has Chosen Japan-U.S.-South Korea Group For its Chip Unit
Apple Could be Behind Toshiba's MoU With Bain Capital's Consortium
Toshiba Signs Memorandum to Accelerate Memory Chip Sale Talks With Bain-Sk Hynix Group
Toshiba in Ongoing Discussions for Chip Business Sale

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2017 - All rights reserved -
Privacy policy - Contact Us .