Friday, December 19, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Apple Responds To BBC's Allegations Over Working Conditions In Chinese Factory
BlackBerry Returns To Cash Flow
Comparison: Quantum Dot Vs. OLED Displays
Toshiba and SK Hynix Reach Settlement in Lawsuit Ahead Of CES
Google Concerned About MPAA?s Actions To Revive SOPA
Facebook And Android Top Digital Trends For 2014
Your Next Car Could Have Android Inside
North Korea Linked To Recent Sony Hacking
Active Discussions
Digital Audio Extraction and Plextools
Will there be any trade in scheme for the coming PSP Go?
Hello, Glad to be Aboard!!!
Best optical drive for ripping CD's? My LG 4163B is mediocre.
Hi All!
cdrw trouble
CDR for car Sat Nav
DVD/DL for Optiarc 7191S at 8X
 Home > News > General Computing > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, October 13, 2010
Samsung Producing 20nm, 64-gigabit 3-bit NAND Flash Memory


Samsung announced today the industry?s first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology.

The dvanced new chip can be used in high-density flash solutions such as USB flash drives (UFDs) and Secure Digital (SD) memory cards.

"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November," said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. "By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."

The availability of storage density as high as eight gigabytes (64Gb) in a single chip will trigger widespread acceptance of Toggle DDR-based high-performance flash in UFDs and SD cards, as well as smart phones and SSDs, while replacing previous four gigabyte (32Gb) devices in the market.

Samsung?s 20nm-class, 64Gb 3-bit NAND has a 60 percent higher productivity level than 30nm-class, 32Gb 3-bit NAND. The device also offers improved performance by applying Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of SDR (Single Data Rate) based 30nm-class NAND chips.


Previous
Next
LG Introduces 72-inch 3D LCD TV        All News        Microsoft Issues Critical Security Fixes
Bing Gets More Social with Facebook     General Computing News      Microsoft Issues Critical Security Fixes

Get RSS feed Easy Print E-Mail this Message

Related News
LG, Samsung, To Dominate The TV Market in 2015
Samsung Started Production of Apple A9 SoC in 14nm FinFET
Samsung Announces Annual Reorganization for 2015
Samsung Releases New 3-bit V-NAND 850 EVO SSD
Possible Samsung Galaxy S6 Specs Leak
Samsung Seeks to Toss $930 Million Award
NAND Flash Industry To Grow More in 2015
Samsung To Sell Fiberoptics Business to Corning
Samsung to Test Tizen Phone in India
Far Cry 4 Game Available For Free With Purchase of 840 EVO SSD
Samsung's DeepSort Sorting Engine Prevails In Benchmarks
Samsung Introduces EYECAN+ Mouse for People with Disabilities

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .