Thursday, July 02, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung Unveils New LEVEL U Wireless Bluetooth Headset
Sony's New Wireless Speakers Available In The U.S.
Fujitsu ETERNUS DX8000 S3 Disk Storage Systems Aim At mainframes And Open Systems
Sony Launches Crowdfunding Platform For Its Products
FIDO Alliance Specifications Add Support for NFC and Bluetooth
Apple Music Goes Live
New Acer Curved IPS Display Comes With AMD FreeSync Support
New Meizu MX5 Unveils In China
Active Discussions
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
How to burn a backup copy of The Frozen Throne
Help make DVDInfoPro better with dvdinfomantis!!!
Copied dvd's say blank in computer only
menu making
Optiarc AD-7260S review
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 17, 2008
Toshiba, IBM, and AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate


Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world's smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).

The cell, developed with a high-k/metal gate (HKMG) material, offers advantages over planar-FET cells for future technology generations. SRAM cells are circuit components in most systems-level, large-scale integrated circuits such as microprocessors, and smaller SRAM cells can help provide smaller, faster processors that consume less power. The technology was announced on December 16 in a technical paper presented at the 2008 International Electron Devices Meeting (http://www.his.com/~iedm/general/) in San Francisco, California.

To reduce the transistor size when SRAM cells are created using conventional planar transistors, IC manufacturers generally adjust properties by doping more impurities into the device area. However, this adjustment creates undesirable variability and deteriorates the SRAM stability. This issue is becoming critical, especially at the 22nm technology node and beyond. The use of FinFETs -- vertical transistors with fin-shaped undoped silicon channels -- is an alternative approach to allow SRAM cell size reduction with less characteristic variation.

Researchers from the three companies fabricated a highly scaled FinFET SRAM cell using HKMG. It is the smallest nonplanar-FET SRAM cell yet achieved: at 0.128μm2, the integrated cell is more than 50 percent smaller than the 0.274μm2 nonplanar-FET cell previously reported. To achieve this goal, the team optimized the processes, especially for depositing and removing materials, including HKMG from vertical surfaces of the non-planar FinFET structure.

The researchers also investigated the stochastic variation of FinFET properties within the highly scaled SRAM cells and simulated SRAM cell variations at an even smaller cell size. They verified that FinFETs without channel doping improved transistor characteristic variability by more than 28 percent. In simulations of SRAM cells of 0.063μm2 area, equivalent to or beyond the cell scaling for the 22nm node, the results confirmed that the FinFET SRAM cell is expected to offer a significant advantage in stable operation compared to a planar-FET SRAM cell at this generation.

By successfully fabricating highly scaled FinFET SRAM cells with HKMG, the companies have positioned FinFETs as an attractive transistor structure for SRAMs in the 22nm node and beyond. The new technology is a step forward to more powerful practical devices.


Previous
Next
Economic Crisis Spurs Mobile-Device Shipment Contraction in 2009        All News        Apple to Exhibit at Macworld For the Last Time
OCZ Introduces New Flex EX Performance Memory Series, Including the Air or Water Cooled DDR2 4GB Kit     PC Parts News      Apple to Exhibit at Macworld For the Last Time

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Announces 6TB Enterprise Cloud HDD
Toshiba Portege WT20 Business Tablet Now Available
IBM and Box Partner to Transform Work in the Cloud
Toshiba Introduces New Satellite Series Laptops, Fusion And Radius 2-In-1 PCs
Toshiba Develops Chip Authentication Technology Using Transistor Noise
Toshiba To License Its TV Business in Europe to Compal
Toshiba Develops SSD Simulation Platform
IBM Maintains Top Position In The List Of U.S. Patents
IBM Buys Blue Box to Accelerate Open Hybrid Clouds
Toshiba Partners with Microsoft to Deliver New Internet of Things Solutions
Toshiba Demonstrates Object Storage Technologies
IBM Scientists Achieve Critical Steps to Building First Quantum Computer

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .