Sunday, April 22, 2018
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Samsung QLED TVs Receive '100 Percent Color Volume' Certification
GSMA Delays eSIM Technology as U.S. DoJ of U.S. Probes Coordination With AT&T and Verizon
Apple to Replace Some MacBook Pro Laptop Batteries
ZTE's Nubia Red Gaming Phone Released
LG Display's OLED Smartphone Screens Still Not Ready For Apple
Nintendo Labo Kits Now Available
June's VLSI Symposium Focuses on Next Generation Transistor Technology and MRAM
Samsung Not Interested in Nokia's Health Unit
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > PC Parts > Toshiba...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 17, 2008
Toshiba, IBM, and AMD Develop World's Smallest FinFET SRAM Cell with High-k/Metal Gate


Toshiba, IBM, and AMD today announced that they have together developed a Static Random Access Memory (SRAM) cell that has an area of only 0.128 square micrometers (μm2), the world's smallest functional SRAM cell that makes use of fin-shaped Field Effect Transistors (FinFETs).

The cell, developed with a high-k/metal gate (HKMG) material, offers advantages over planar-FET cells for future technology generations. SRAM cells are circuit components in most systems-level, large-scale integrated circuits such as microprocessors, and smaller SRAM cells can help provide smaller, faster processors that consume less power. The technology was announced on December 16 in a technical paper presented at the 2008 International Electron Devices Meeting (http://www.his.com/~iedm/general/) in San Francisco, California.

To reduce the transistor size when SRAM cells are created using conventional planar transistors, IC manufacturers generally adjust properties by doping more impurities into the device area. However, this adjustment creates undesirable variability and deteriorates the SRAM stability. This issue is becoming critical, especially at the 22nm technology node and beyond. The use of FinFETs -- vertical transistors with fin-shaped undoped silicon channels -- is an alternative approach to allow SRAM cell size reduction with less characteristic variation.

Researchers from the three companies fabricated a highly scaled FinFET SRAM cell using HKMG. It is the smallest nonplanar-FET SRAM cell yet achieved: at 0.128μm2, the integrated cell is more than 50 percent smaller than the 0.274μm2 nonplanar-FET cell previously reported. To achieve this goal, the team optimized the processes, especially for depositing and removing materials, including HKMG from vertical surfaces of the non-planar FinFET structure.

The researchers also investigated the stochastic variation of FinFET properties within the highly scaled SRAM cells and simulated SRAM cell variations at an even smaller cell size. They verified that FinFETs without channel doping improved transistor characteristic variability by more than 28 percent. In simulations of SRAM cells of 0.063μm2 area, equivalent to or beyond the cell scaling for the 22nm node, the results confirmed that the FinFET SRAM cell is expected to offer a significant advantage in stable operation compared to a planar-FET SRAM cell at this generation.

By successfully fabricating highly scaled FinFET SRAM cells with HKMG, the companies have positioned FinFETs as an attractive transistor structure for SRAMs in the 22nm node and beyond. The new technology is a step forward to more powerful practical devices.


Previous
Next
Economic Crisis Spurs Mobile-Device Shipment Contraction in 2009        All News        Apple to Exhibit at Macworld For the Last Time
OCZ Introduces New Flex EX Performance Memory Series, Including the Air or Water Cooled DDR2 4GB Kit     PC Parts News      Apple to Exhibit at Macworld For the Last Time

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Releases New Surveillance, Video Streaming Laptop and Desktop Hard Drives
China Opposes SK hynix-Toshiba Deal
Toshiba Delays Memory Chip Unit Sale
Toshiba Memory to Make New Investment in Production Equipment for Fab 6 at Yokkaichi Operation
Toshiba Launches KumoScale NVM Express over Fabrics Storage Software for Cloud Infrastructures
IBM Sets Tera-scale Machine Learning Benchmark Record with POWER9 and GPUs
IBM Creates Computers Smaller Than a Grain of Salt
Toshiba Adds 64-layer BiCS CD5, XD5 and HK6-DC Models to Data Center SSD Lineup
Researchers Create Promising Flexible Electronics Based on Carbon Nanotubes
Western Digital to Inject $4.6bn in Toshiba Memory
HPE and Dell Server Sales Soar in Q4
Toshiba Completes Transfer of its TV Business to Chinese Hisense Group

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2018 - All rights reserved -
Privacy policy - Contact Us .