Friday, March 06, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Three People Charged with One of the Largest Reported Data Breaches in U.S. History
GIGABYTE Launches New X99 Champion Series Motherboards
ASUS Announces New GR8S Steam Machine
Windows Also Vulnerable to FREAK Encryption Flaw
Fujitsu Technology Recognizes Faces Appearing In Low-Resolution Images
Apple Allowed App Developers Fine-tune Apps Before Watch Debut
Google Introduces Insurance Shopping Site
U.S. Trade Office Releases Latest Notorious Markets List
Active Discussions
Hello
Newbie
Need serious help!!!!
burning
nvidia 6200 review
Burning Multimedia in track 0
I'm lazy. Please help.
sanyo e6 camera
 Home > News > PC Parts > Sony an...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 07, 2005
Sony and Toshiba Develop Technologies for Enhanced 45nm Generation System LSI


Toshiba and Sony today announced the development of essential technologies for system LSI based on next-generation 45-nanometer process technology.

The advances cover the development of carrier mobility enhancement technologies and wiring process technology for boosting LSI performance.

Toshiba and Sony have raised current drive performance in transistors by developing strained silicon technologies that enhance carrier mobility. They have also developed a performance-enhancing low dielectric constant (low-k) film technology for implementation between layers in multi-layer wiring.

Two advances in strained silicon technologies improve individual transistor performance and overall device performance. The first optimizes the thickness of a stress liner covering the transistor and improves current drive performance by approximately 40%. The second brings global stress into the device substrate in a low cost process that realizes an approximately 20% improvement of current drive performance.

In seeking improved low-k film technology, Toshiba and Sony enhanced the quality of the low-k film by appropriately allocating dummy wiring to improve removal of moisture from the film. In doing so, they overcame the problem of poor drain characteristics in low-k film.

In 45nm generation system LSI, miniaturization of circuitry is no guarantee of performance improvement. Miniaturization must be accompanied by performance enhancement technologies, including utilization of new materials and structures. In following this approach, Toshiba and Sony have clarified conditions for applying innovative support technologies to actual products.

Toshiba and Sony announced details of the technologies at the International Electron Devices Meeting (IEDM), which runs in Washington D.C. from December 5 to December 7.

For more information read the official press release.


Previous
Next
New Rechargeable Battery Charges in 30 Seconds        All News        Kano to Distribute Ricoh's Encryption CD-R Media in North America
AMD And IBM Unveil 65nm Process Technologies     PC Parts News      Carbon Nanotube Heatsinks by Fujitsu

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba Starts Shipping 20-Megapixel CMOS Image Sensor For Mobile Devices
New Toshiba Smartwatch Reference Model features Bluetooth connectivity and Qi Wireless Charging
Sony's Project Morpheus Upgraded, Coming in 2016
Toshiba Develops STT-MRAM Circuit For High-performance Processors
MWC: Sony Introduces The New Xperia Z4 and Xperia M4 Aqua Tablets
Toshiba Develops Multicore SoC For Image-Recognition Applications
Toshiba Launches 8 Megapixel CMOS Image Sensor for Smartphones and Tablets
Sony Xperia Z4 Tablet Appears Online With 2K Display
Toshiba Introduces New APs For For IoT Solutions
Toshiba Achieves 1Tbit per Square Inch Areal Density in a 2.5-Inch Hard Disk Drive
Sony Releases New Wireless Bluetooth Headphones
Sony Launches Memory Card For Premium Sound

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .