Tuesday, March 31, 2015
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Google Releases Cheaper Chromebooks
Intel Releases New Braswell SoCs
WD's My Passport X Delivers 2 TB of Storage for Xbox One and PC Gamers
Google To Use SSDs From Samsung: report
Microsoft Introduces The Surface 3
Samsung Now Offers New Lineup of 3-bit V-NAND Based 850 EVO SSDs for Ultrathin PCs
Samsung, LG End Legal Disputes
IBM Connects Internet of Things to the Enterprise
Active Discussions
how to copy and move data files to dvd-rw
cdrw trouble
Need serious help!!!!
burning
nvidia 6200 review
Hello
Burning Multimedia in track 0
I'm lazy. Please help.
 Home > News > PC Parts > Sony an...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, December 07, 2005
Sony and Toshiba Develop Technologies for Enhanced 45nm Generation System LSI


Toshiba and Sony today announced the development of essential technologies for system LSI based on next-generation 45-nanometer process technology.

The advances cover the development of carrier mobility enhancement technologies and wiring process technology for boosting LSI performance.

Toshiba and Sony have raised current drive performance in transistors by developing strained silicon technologies that enhance carrier mobility. They have also developed a performance-enhancing low dielectric constant (low-k) film technology for implementation between layers in multi-layer wiring.

Two advances in strained silicon technologies improve individual transistor performance and overall device performance. The first optimizes the thickness of a stress liner covering the transistor and improves current drive performance by approximately 40%. The second brings global stress into the device substrate in a low cost process that realizes an approximately 20% improvement of current drive performance.

In seeking improved low-k film technology, Toshiba and Sony enhanced the quality of the low-k film by appropriately allocating dummy wiring to improve removal of moisture from the film. In doing so, they overcame the problem of poor drain characteristics in low-k film.

In 45nm generation system LSI, miniaturization of circuitry is no guarantee of performance improvement. Miniaturization must be accompanied by performance enhancement technologies, including utilization of new materials and structures. In following this approach, Toshiba and Sony have clarified conditions for applying innovative support technologies to actual products.

Toshiba and Sony announced details of the technologies at the International Electron Devices Meeting (IEDM), which runs in Washington D.C. from December 5 to December 7.

For more information read the official press release.


Previous
Next
New Rechargeable Battery Charges in 30 Seconds        All News        Kano to Distribute Ricoh's Encryption CD-R Media in North America
AMD And IBM Unveil 65nm Process Technologies     PC Parts News      Carbon Nanotube Heatsinks by Fujitsu

Get RSS feed Easy Print E-Mail this Message

Related News
Toshiba, Sandisk, Develop First 48-layer 3D NAND For SSDs
Toshiba Expands Line-up of eMMC Version 5.1 Embedded NAND Flash Memory Products
Toshiba Starts Production of 13-Megapixel CMOS Image Sensor With "Bright Mode" Video Technology
Toshiba Expands Internal and External Desktop Hard Drive Lineup With New 6TB Models
Android Lollipop Coming On Xperia Z3 And Xperia Z3 Compact
Sony Brings You Cinematic sound With New Sound Bars
Sony Releases New 4K/HD Memory Player
Toshiba Debuts 12.0 Gbps SAS HDD
Toshiba Starts Shipping 20-Megapixel CMOS Image Sensor For Mobile Devices
New Toshiba Smartwatch Reference Model features Bluetooth connectivity and Qi Wireless Charging
Sony's Project Morpheus Upgraded, Coming in 2016
Toshiba Develops STT-MRAM Circuit For High-performance Processors

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2015 - All rights reserved -
Privacy policy - Contact Us .