Monday, September 26, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Snapchat Introduces 'Spectacles' Camera-equipped Glasses, Changes Company name To Snap
Nvidia GPUs Could Return To Apple Macs
Lenovo Brings Fingerprint Authenticated Payments To Laptops
Report Cites Google, Salesforce Interest For Twitter
Dalian Wanda and Sony Enters Team Up in China Movie Business
Apple Develops Amazon Echo-Style Device
ALD Technology Chosen By Samsung, LG For Flexible OLEDs
TSMC To Use Different Processes And 3D Packages Across Future Design Platforms
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, September 07, 2005
Samsung Introduces 256-Megabit Pseudo-SRAM


Samsung today said that it plans to begins production of a high-density UtRAM, the firm's Pseudo SRAM product, later this year. The memory aims to accelerate multimedia applications in 3G cellphones.

UtRAM modules - commonly known as Pseudo SRAM - are built with a single-transistor DRAM-like memory cell structure, but do not come with a DRAM interface and therefore reduce the component count of regular DRAMs. As a result, the SRAM or NOR Flash interface-equipped UtRAM can be manufactured in smaller overall size. Since PSRAMs do not integrate a pipeline architecture, power consumption typically drops significantly when compared to regular DRAMs.

Samsung's UtRAM is built in a 90 nm process and is the industry's first device with 256 Mbit capacity. Clocked at 133 MHz, the memory is about 1.7 times faster than today's 80 MHz PSRAM. The manufacturer believes the speed gain will pay off in multimedia applications for cellphones. Sampling of the memories is scheduled to begin later this month, volume shipments are expected by the end of 2005.

The 256Mb UtRAM is fully compliant to JEDEC's (Joint Electron Device Engineering Council) burst pseudo-SRAM standard.

The global market for pseudo-SRAM, of which Samsung claims to hold at least 30 percent, is forecast to grow an annual 33 percent through 2008.


Previous
Next
MediaTek to Boost Workforce by 50%        All News        New Free Software License Takes Aim at Patents, DRM
Ericsson to Invest One Billion Dollars in China     Mobiles News      4G prototypes reach blistering speeds

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Says Battery Not Related To Note 7 Fire Reports in China
Samsung Narrows Gap With Intel In Semiconductor Industry Ranking
How to Identify the New Galaxy Note7
Samsung Sells Stakes in ASML, Seagate, Rambus and Sharp
Samsung's Recall For The Galaxy Note 7 Smartphones In Official In The U.S.
Samsung's Software "Fix" For Galaxy Note 7 Limits Battery Recharges
HP To Buy Samsung's Printer Business For $1.05 billion
Samsung Urges Galaxy Note7 Users To Immediately Bring Their Phones For Replacement
US, Japan Aviation Authorities Warn Against Using Samsung Galaxy Note 7 On Planes
Samsung to Sell Stake in Chip Equipment Maker ASML
Five Samsung C-Lab Projects are Rethinking the Future
Samsung To Replace Current Note7 Devices Due To Overheating Issues

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .