Saturday, December 20, 2014
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Kodak Returns To CES With Consumer Product Line
North Korea Suggests Joint Inverstigation With U.S. Over Sony Hacking
T-Mobile to Pay $90 Million To Settle Case With FCC
New Trojan Targetted Banks Wordlwide
FBI Confirms North Korea Was Behind Sony Hack
Apple Responds To BBC's Allegations Over Working Conditions In Chinese Factory
BlackBerry Returns To Cash Flow
Comparison: Quantum Dot Vs. OLED Displays
Active Discussions
Digital Audio Extraction and Plextools
Will there be any trade in scheme for the coming PSP Go?
Hello, Glad to be Aboard!!!
Best optical drive for ripping CD's? My LG 4163B is mediocre.
Hi All!
cdrw trouble
CDR for car Sat Nav
DVD/DL for Optiarc 7191S at 8X
 Home > News > Mobiles > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, September 07, 2005
Samsung Introduces 256-Megabit Pseudo-SRAM


Samsung today said that it plans to begins production of a high-density UtRAM, the firm's Pseudo SRAM product, later this year. The memory aims to accelerate multimedia applications in 3G cellphones.

UtRAM modules - commonly known as Pseudo SRAM - are built with a single-transistor DRAM-like memory cell structure, but do not come with a DRAM interface and therefore reduce the component count of regular DRAMs. As a result, the SRAM or NOR Flash interface-equipped UtRAM can be manufactured in smaller overall size. Since PSRAMs do not integrate a pipeline architecture, power consumption typically drops significantly when compared to regular DRAMs.

Samsung's UtRAM is built in a 90 nm process and is the industry's first device with 256 Mbit capacity. Clocked at 133 MHz, the memory is about 1.7 times faster than today's 80 MHz PSRAM. The manufacturer believes the speed gain will pay off in multimedia applications for cellphones. Sampling of the memories is scheduled to begin later this month, volume shipments are expected by the end of 2005.

The 256Mb UtRAM is fully compliant to JEDEC's (Joint Electron Device Engineering Council) burst pseudo-SRAM standard.

The global market for pseudo-SRAM, of which Samsung claims to hold at least 30 percent, is forecast to grow an annual 33 percent through 2008.


Previous
Next
MediaTek to Boost Workforce by 50%        All News        New Free Software License Takes Aim at Patents, DRM
Ericsson to Invest One Billion Dollars in China     Mobiles News      4G prototypes reach blistering speeds

Get RSS feed Easy Print E-Mail this Message

Related News
LG, Samsung, To Dominate The TV Market in 2015
Samsung Started Production of Apple A9 SoC in 14nm FinFET
Samsung Announces Annual Reorganization for 2015
Samsung Releases New 3-bit V-NAND 850 EVO SSD
Possible Samsung Galaxy S6 Specs Leak
Samsung Seeks to Toss $930 Million Award
Samsung To Sell Fiberoptics Business to Corning
Samsung to Test Tizen Phone in India
Far Cry 4 Game Available For Free With Purchase of 840 EVO SSD
Samsung's DeepSort Sorting Engine Prevails In Benchmarks
Samsung Introduces EYECAN+ Mouse for People with Disabilities
Samsung to Phase Out Mobile App Service

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2014 - All rights reserved -
Privacy policy - Contact Us .