Monday, May 30, 2016
Search
  
Submit your own News for
inclusion in our Site.
Click here...
Breaking News
Patriot Announces 2TB Ignite SSD
ASUS Presents Zenvolution at Computex 2016
MediaTek Introduces Pump Express 3.0 Battery Charging Solution
New ARM Cortex-A73 Processor Drives Efficiency, Performance For Mobile Designs
Plextor To Showcase Its Gaming Grade SSDs at Computex 2016
Nvidia's GeForce GTX 1080 Launches Wordlwide
Corsair Bulldog PC Is Seeking A Place In Your Living Room
Samsung Galaxy C5 and C7 Released In China
Active Discussions
Which of these DVD media are the best, most durable?
How to back up a PS2 DL game
Copy a protected DVD?
roxio issues with xp pro
Help make DVDInfoPro better with dvdinfomantis!!!
menu making
Optiarc AD-7260S review
cdrw trouble
 Home > News > Mobiles > Samsung...
Last 7 Days News : SU MO TU WE TH FR SA All News

Wednesday, September 07, 2005
Samsung Introduces 256-Megabit Pseudo-SRAM


Samsung today said that it plans to begins production of a high-density UtRAM, the firm's Pseudo SRAM product, later this year. The memory aims to accelerate multimedia applications in 3G cellphones.

UtRAM modules - commonly known as Pseudo SRAM - are built with a single-transistor DRAM-like memory cell structure, but do not come with a DRAM interface and therefore reduce the component count of regular DRAMs. As a result, the SRAM or NOR Flash interface-equipped UtRAM can be manufactured in smaller overall size. Since PSRAMs do not integrate a pipeline architecture, power consumption typically drops significantly when compared to regular DRAMs.

Samsung's UtRAM is built in a 90 nm process and is the industry's first device with 256 Mbit capacity. Clocked at 133 MHz, the memory is about 1.7 times faster than today's 80 MHz PSRAM. The manufacturer believes the speed gain will pay off in multimedia applications for cellphones. Sampling of the memories is scheduled to begin later this month, volume shipments are expected by the end of 2005.

The 256Mb UtRAM is fully compliant to JEDEC's (Joint Electron Device Engineering Council) burst pseudo-SRAM standard.

The global market for pseudo-SRAM, of which Samsung claims to hold at least 30 percent, is forecast to grow an annual 33 percent through 2008.


Previous
Next
MediaTek to Boost Workforce by 50%        All News        New Free Software License Takes Aim at Patents, DRM
Ericsson to Invest One Billion Dollars in China     Mobiles News      4G prototypes reach blistering speeds

Get RSS feed Easy Print E-Mail this Message

Related News
Samsung Galaxy C5 and C7 Released In China
Samsung To Launch SamsungPay Mini Online Payments App
Samsung and Warner Bros. Release The Samsung Galaxy S7 edge Injustice Edition
Samsung Introduces Galaxy Tab Iris Equipped with Iris Recognition Technology
Huawei Sues Samsung Over Mobile Patents
Samsung Expands 750 EVO SSD With Availability and Increases Capacity to 500GB
Samsung, LG to Unveil Their Display Technologies at SID 2016
LINE FRIENDS Accessories Come to Samsung Galaxy S7 and S7 edge
Samsung Ties Up with Alibaba In Mobile Payments: report
IBM Scientists Achieve Storage Memory Breakthrough
Samsung And LG Electronics To Offer Accerss To More Games Though Their Smart TVs
Samsung Gear Fit 2 And Gear Icon X Earbuds Coming Next Month

Most Popular News
 
Home | News | All News | Reviews | Articles | Guides | Download | Expert Area | Forum | Site Info
Site best viewed at 1024x768+ - CDRINFO.COM 1998-2016 - All rights reserved -
Privacy policy - Contact Us .