Hynix Semiconductor today announced it has received the industry?s first validation on its DDR3 memory components and modules from Intel. Hynix?s newly-validated DDR3 products are 1Gigabit DDR3 SDRAM component manufactured on the Company?s 80nm process technology, 1Gigabyte and 2Gigabyte DDR3 Unbuffered-DIMMs. These devices boast operating speeds of 800MHz and 1066MHz at 1.5V power supply. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800MHz, and 7-7-7 for 1066MHz, to suit the needs of a wide range of PCs, workstations and other applications.

DDR3 also features reduced current consumption of almost 25%, compared to the present generation DDR2. Hynix says that its 'three-dimensional transistor' architecture minimizes current leakage to further reduce overall current consumption and ensure data integrity.

DDR3 is expected to succeed the current mainstream DDR2 products. Demand for DDR3 is expected to emerge towards the end of the year.

Mass production of the 1Gb DDR3 on the 80nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on the new 66nm process beginning in late 2007.