Intel to Invest Over One billion Dollars for 45nm Site in New Mexico
Intel today announced that it will invest $1 billion to $1.5 billion in its Rio Rancho site to retool Fab 11X for production on Intel's next generation 45 nanometer (nm) manufacturing process.
Fab 11X will be the company's fourth factory scheduled to use the 45nm process, with production in New Mexico scheduled to start in the second half of next year.
Intel's 45nm high-k and metal gate process consists of an innovative combination of new transistor materials that drastically reduces transistor leakage and increases performance. When 45nm production begins later this year, the company will use a new material with a higher-k (dielectric constant), and a new combination of metal materials for the transistor gate electrode. Early versions of Intel's next generation 45nm family of products - codenamed Penryn - are already running multiple operating systems and applications, and the company remains on track to begin 45nm production in the second half of this year.
"Our Rio Rancho site has successfully operated in New Mexico for 27 years. Based on that success, we are pleased to position Fab 11X for Intel's next generation of technology," said Paul Otellini, Intel Corporation's president and chief executive officer.
Initial production of Intel's 45nm products will be done at its Oregon development fab, D1D. The company is currently building two other factories that will use the 45nm process. The $3 billion Fab 32 in Chandler, Ariz., will commence production late this year; and the $3.5 billion Fab 28 in Kiryat Gat, Israel, will begin production the first half of next year.
Fab 11X currently manufactures 90nm computer chips on 300mm wafers. Fab 11X began production in October 2002 and was Intel's first 300mm, or 12 inch, high-volume manufacturing facility. It was also Intel's first fully automated, high volume factory producing 300mm wafers.
Rival AMD will make use of IBM's competing 45nm process, which IBM claims uses similar techniques to control leakage.
Intel's 45nm high-k and metal gate process consists of an innovative combination of new transistor materials that drastically reduces transistor leakage and increases performance. When 45nm production begins later this year, the company will use a new material with a higher-k (dielectric constant), and a new combination of metal materials for the transistor gate electrode. Early versions of Intel's next generation 45nm family of products - codenamed Penryn - are already running multiple operating systems and applications, and the company remains on track to begin 45nm production in the second half of this year.
"Our Rio Rancho site has successfully operated in New Mexico for 27 years. Based on that success, we are pleased to position Fab 11X for Intel's next generation of technology," said Paul Otellini, Intel Corporation's president and chief executive officer.
Initial production of Intel's 45nm products will be done at its Oregon development fab, D1D. The company is currently building two other factories that will use the 45nm process. The $3 billion Fab 32 in Chandler, Ariz., will commence production late this year; and the $3.5 billion Fab 28 in Kiryat Gat, Israel, will begin production the first half of next year.
Fab 11X currently manufactures 90nm computer chips on 300mm wafers. Fab 11X began production in October 2002 and was Intel's first 300mm, or 12 inch, high-volume manufacturing facility. It was also Intel's first fully automated, high volume factory producing 300mm wafers.
Rival AMD will make use of IBM's competing 45nm process, which IBM claims uses similar techniques to control leakage.
