To print: Select File and then Print from your browser's menu.

    -----------------------------------------------

     This story was printed from CdrInfo.com,

     located at http://www.cdrinfo.com.

    -----------------------------------------------

Toshiba launches a new embedded NAND flash memory modules integrating NAND chips fabricated with 19nm second generation process technology.

Toshiba's new 32-gigabyte (GB) embedded device integrates four 64Gbit (equal to 8GB) NAND chips fabricated with Toshiba's 19nm second generation process technology and a dedicated controller into a small package measuring 11.5 x 13 x 1.0mm. It is compliant with JEDEC e･MMCTM Version 5.0, published by JEDEC in September, and achieves a high read/write performance by applying the new HS400 high speed interface standard.

The JEDEC e•MMCTM V5.0 compliant interface handles essential functions, including writing block management, error correction and driver software.

Toshiba will bring the NAND chips to a line-up of single-package embedded NAND flash memories in densities from 4GB to 128GB. All will integrate a controller to manage basic control functions for NAND applications.

Product Name	THGBMBG8D4KBAIR	THGBMBG7D2KBAIL
Interface	JEDEC e•MMCV5.0 standard HS-MMC interface
Capacity	32GB	16GB
Power Supply Voltage	2.7～3.6V  (Memory core) 1.7V～1.95V / 2.7V～3.6V  (Interface)
Bus Width	x1 / x4 / x8
Write Speed	90MB per sec.(Sequential/HS400 Mode)		50MB per sec.(Sequential/HS400 Mode)
Read Speed	270MB per sec.(Sequential/HS400 Mode)		270MB per sec.(Sequential/HS400 Mode)
Temperature Range	-25degrees to +85degees Celsius
Package	153Ball FBGA 11.5x13x1.0mm	153Ball FBGA 11.5x13x0.8mm

Tweet