Rambus today announced its first LPDDR3 offering targeted
at the mobile industry.
The R+ LPDDR3 memory architecture is fully compatible with
industry standards while providing improved power and
performance. The architecture includes both a controller
and a DRAM interface. According to Rambus, it can reduce
active memory system power by up to 25% and supports data
rates of up to 3200 megabits per second (Mbps), which is
double the performance of existing LPDDR3 technologies.
"Each generation of mobile devices demands even higher
performance with lower power. The R+ LPDDR3 technology
enables the mobile market to use our controller and DRAM
solutions to provide unprecedented levels of performance,
with a significant power savings," said Kevin Donnelly,
senior vice president and general manager of the Memory
and Interface Division at Rambus. "Since this technology
is a part of our R+ platform, beyond the improvements in
power and performance, we're also maintaining
compatibility with today's standards to ensure our
customers have all the benefits of the Rambus' superior
technology with reduced adoption risk."
The seed to the improved power and performance offered by
the R+ LPDDR3 architecture is a low-swing implementation
of the Rambus Near Ground Signaling technology.
Essentially, this single-ended, ground-terminated
signaling technology allows devices to achieve higher data
rates with significantly reduced IO power.
Additional key features of the R+ LPDDR3 include:
- 1600 to 3200Mbps data rates
- Multi-modal support for LPDDR2, LPDDR3 and R+
LPDDR3
- DFI 3.1 and JEDEC LPDDR3 standards compliant
- Supports package-on-package and discrete packaging
types
- Includes LabStation software environment for bring-up,
characterization, and validation in end-user
application
- Silicon proven design in GLOBALFOUNDRIES 28nm-SLP
process
The R+ LPDDR3 memory controller and DRAM interface
solutions are currently available.