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Friday, August 30, 2013
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Samsung Now Mass Producing 20nm DDR4
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Samsung Electronics on Friday announced that it is mass producing high-performance, high-density DDR4 memory, for enterprise servers in next-generation data centers.
Early market availability of the 4-gigabit (Gb) DDR4 devices, which use 20 nanometer (nm)-class process technology, will facilitate demand for 16-gigabyte (GB) and 32GB memory modules. This compares to conventional DRAM of which 8GB modules using a 30nm-class process technology are still commonplace.
"The adoption of ultra-high-speed DDR4 in next-generation server systems this year will initiate a push toward advanced premium memory across the enterprise," said Young-Hyun Jun, executive vice president, memory sales & marketing, Samsung Electronics. "After providing cutting-edge performance with our timely supply of 16GB DDR3 earlier this year, we are continuing to extend the premium server market in 2013 and will now focus on higher density and added performance with 32GB DDR4, and contribute to even greater growth of the green IT market in 2014."
In next-generation enterprise servers, the use of higher speed DRAM raises system level performance and lowers overall power consumption significantly.
Production of Samsung?s 20nm-class 4Gb DDR4 follows the introduction of 50nm-class 2Gb DDR3 in 2008, culminating in a full-fledged transition to DDR4 for large-scale data centers and other enterprise applications in just five years. The 4Gb-based DDR4 has the fastest DRAM data transmission rate of 2,667 megabits per second - a 1.25-fold increase over 20nm-class DDR3, while lowering power consumption by more than 30 percent.
Samsung did not provide information on the schedule for shipment of the new memories. The pricing information is also not available.
Microelectronics standards body JEDEC Solid State Technology Association published in September 2012 the initial DDR4 standard. |
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